MXSMBJ11AE3 Circuit Protection |
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Allicdata Part #: | 1086-14006-ND |
Manufacturer Part#: |
MXSMBJ11AE3 |
Price: | $ 16.26 |
Product Category: | Circuit Protection |
Manufacturer: | Microsemi Corporation |
Short Description: | TVS DIODE 11V 18.2V DO214AA |
More Detail: | N/A |
DataSheet: | MXSMBJ11AE3 Datasheet/PDF |
Quantity: | 1000 |
Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
100 +: | $ 14.78170 |
Series: | Military, MIL-PRF-19500 |
Packaging: | Bulk |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
Type: | Zener |
Unidirectional Channels: | 1 |
Voltage - Reverse Standoff (Typ): | 11V |
Voltage - Breakdown (Min): | 12.2V |
Voltage - Clamping (Max) @ Ipp: | 18.2V |
Current - Peak Pulse (10/1000µs): | 33A |
Power - Peak Pulse: | 600W |
Power Line Protection: | No |
Applications: | General Purpose |
Capacitance @ Frequency: | -- |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AA, SMB |
Supplier Device Package: | SMBJ (DO-214AA) |
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TVS - Diodes are components that forms an integral part in many industrial application. They are semiconductor devices which help limit the voltage to the desired level and are used to protect I/O ports, servers, and consumer electronics from electrostatic discharge, surge, lightning, and inductive loads. The MXSMBJ11AE3 is another one of these TVS diodes designed for high-reliability and low power applications. It is a surface mountable low capacitance transient voltage suppressor which has a uni-directional function.
Application Field
In terms of applications, the MXSMBJ11AE3 is typically used to protect small or medium-sized electronics from transients such as those generated from load switching operations and fault conditions. Some of the various areas it can be used in are:
- Industrial Applications
- Automotive Applications
- Data and Telecom Equipment
- Medical Equipment
- Military and Aerospace Applications
It is widely used in portable electronic devices such as PDAs, notebooks, fax machines, and mobile phones, as it is able to provide them with I/O port protection.
Architecture
The architecture of the MXSMBJ11AE3 consists of its two pins. The pins are connected to the anode and cathode respectively and may have a single layer of silicon oxide or a different dielectric that will protect their interiors form the electrostatic effects. It also contains a unipolar or bidirectional diode. This diode is capable of suppressing high frequency noise signals.
The device is built on a thicker n-type silicon substrate along with a metal line. It also has a layer of aluminum and other metals which act as heat transfer methods to dissipate the heat that results from transients, thus protecting the device and electronics device around it.
Workign principle
The MXSMBJ11AE3 works by clamping the voltage at a certain level, thus protecting the connected devices from overvoltages or transients. In essence, once an overvoltage occurs, it will start to conduct and quickly reduce the voltage down to a safe level. When a normal power supply voltage is applied, the diode does not conduct, so no current flows which saves power and also prevents damage to other components.
The way the MXSMBJ11AE3 works is that when a voltage surge or other transient occurs, the breakdown voltage of the device is reached and it begins to conduct current. This causes a rapid reduction in voltage. This action is essential in eliminating the risk of damage to the electronics which are connected to the device.
In order to understand the beneficial features of this device, it is important to consider the different types of protection it offers. It is able to protect against electrostatic discharge, over-voltage, and surge. It also helps prevent the buildup of electrostatic charge when common-mode current flows through the device. This is important to reduce the risk of causing a fire due to the presence of an undesired direct current.
Overall, the MXSMBJ11AE3 TVS diode is an important and powerful device that can provide reliable protection to sensitive electrical and electronic components. As a result, it is widely used in industrial, automotive, military, and consumer applications for ensuring safety and long-term performance.
The specific data is subject to PDF, and the above content is for reference
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MXSMBG2K3.3E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 3.3V 5.8V DO215... |
MXSMBG2K4.0 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4V 6.3V DO215AA |
MXSMBG2K4.0E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4V 6.3V DO215AA |
MXSMBG2K4.5 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4.5V 6.6V DO215... |
MXSMBG2K4.5E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4.5V 6.6V DO215... |
MXSMBG2K5.0 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 5V 7.6V DO215AA |
MXSMBG2K5.0E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 5V 7.6V DO215AA |
MXSMBJ2K3.0 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 3V 5.4V DO214AA |
MXSMBJ2K3.0E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 3V 5.4V DO214AA |
MXSMBJ2K3.3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 3.3V 5.8V DO214... |
MXSMBJ2K3.3E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 3.3V 5.8V DO214... |
MXSMBJ2K4.0 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4V 6.3V DO214AA |
MXSMBJ2K4.0E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4V 6.3V DO214AA |
MXSMBJ2K4.5 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4.5V 6.6V DO214... |
MXSMBJ2K4.5E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4.5V 6.6V DO214... |
MXSMBJ2K5.0 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 5V 7.6V DO214AA |
MXSMBJ2K5.0E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 5V 7.6V DO214AA |
MXSMCJ5.0CA | Microsemi Co... | 15.34 $ | 3 | TVS DIODE 5V 9.2V DO214AB |
MXSMBJ100A | Microsemi Co... | 16.26 $ | 1000 | TVS DIODE 100V 162V DO214... |
MXSMBJ100AE3 | Microsemi Co... | 16.26 $ | 1000 | TVS DIODE 100V 162V DO214... |
MXSMBJ10A | Microsemi Co... | 16.26 $ | 1000 | TVS DIODE 10V 17V DO214AA |
MXSMBJ10AE3 | Microsemi Co... | 16.26 $ | 1000 | TVS DIODE 10V 17V DO214AA |
MXSMBJ110A | Microsemi Co... | 16.26 $ | 1000 | TVS DIODE 110V 177V DO214... |
MXSMBJ110AE3 | Microsemi Co... | 16.26 $ | 1000 | TVS DIODE 110V 177V DO214... |
MXSMBJ11A | Microsemi Co... | 16.26 $ | 1000 | TVS DIODE 11V 18.2V DO214... |
MXSMBJ11AE3 | Microsemi Co... | 16.26 $ | 1000 | TVS DIODE 11V 18.2V DO214... |
MXSMBJ120A | Microsemi Co... | 16.26 $ | 1000 | TVS DIODE 120V 193V DO214... |
MXSMBJ120AE3 | Microsemi Co... | 16.26 $ | 1000 | TVS DIODE 120V 193V DO214... |
MXSMBJ12A | Microsemi Co... | 16.26 $ | 1000 | TVS DIODE 12V 19.9V DO214... |
MXSMBJ12AE3 | Microsemi Co... | 16.26 $ | 1000 | TVS DIODE 12V 19.9V DO214... |
MXSMBJ130A | Microsemi Co... | 16.26 $ | 1000 | TVS DIODE 130V 209V DO214... |
MXSMBJ130AE3 | Microsemi Co... | 16.26 $ | 1000 | TVS DIODE 130V 209V DO214... |
MXSMBJ13A | Microsemi Co... | 16.26 $ | 1000 | TVS DIODE 13V 21.5V DO214... |
MXSMBJ13AE3 | Microsemi Co... | 16.26 $ | 1000 | TVS DIODE 13V 21.5V DO214... |
MXSMBJ14A | Microsemi Co... | 16.26 $ | 1000 | TVS DIODE 14V 23.2V DO214... |
MXSMBJ14AE3 | Microsemi Co... | 16.26 $ | 1000 | TVS DIODE 14V 23.2V DO214... |
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