MXSMBJ5.0A Allicdata Electronics

MXSMBJ5.0A Circuit Protection

Allicdata Part #:

1086-14115-ND

Manufacturer Part#:

MXSMBJ5.0A

Price: $ 16.26
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 5V 9.2V DO214AA
More Detail: N/A
DataSheet: MXSMBJ5.0A datasheetMXSMBJ5.0A Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
100 +: $ 14.78170
Stock 1000Can Ship Immediately
$ 16.26
Specifications
Voltage - Clamping (Max) @ Ipp: 9.2V
Supplier Device Package: SMBJ (DO-214AA)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 600W
Current - Peak Pulse (10/1000µs): 65.2A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 6.4V
Voltage - Reverse Standoff (Typ): 5V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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The MXSMBJ5.0A diode is classified among the TVS – Transient Voltage Suppression, Diodes. It is a low capacitance, single-line TVS diode and is designed to protect sensitive electronics from destructive EMI/RFI transient overvoltage events. In this article, the application fields and working principle of MXSMBJ5.0A can be discussed.

The MXSMBJ5.0A device is mainly used to protect high-speed data and signal lines, such as HDMI, SATA, USB, LVDS and Ethernet. It is RoHS compliant and halogen-free. The advantages of this device over other protection devices are that MXSMBJ5.0A offers a low capacitance of just 0.3pF which is suitable for high-speed data lines and robust ESD protection up to +/-15kV. Furthermore, it has proven EMI/RFI noise filtering capability and excellent clamping performance.

Additionally, MXSMBJ5.0A features a wide reverse breakdown voltage range of 5.0 to 450V for maximum protection against transient overvoltage events. The diode also provides a low maximum clamping voltage, typically 58.2V for 8/20us risetime pulse and 40.5V for 10/1000us pulse, which helps to reduce stress on downstream electronics.

The operation of MXSMBJ5.0A is based on the concept of Zener breakdown. In normal voltage conditions, the diode behaves like a closed switch, allowing current to flow through it uninterrupted. However, when the applied voltage exceeds the breakdown voltage of the diode, it enter breakdown and begins to conduct. In the breakdown region the voltage across the diode is approximately constant and the current through it increases exponentially, leading to a significant power dissipation and a decrease in resistance. The power dissipation limits the amount of energy that the device can absorb, and also impacts the life expectancy of the device.

Apart from the breakdown voltage, another important parameter to consider when using MXSMBJ5.0A is the operating temperature. The device can tolerate a maximum operating temperature up to 150ºC. The high temperature rating of the diode helps to increase its reliability for applications in harsh conditions. Additionally, when these diodes are used for space constrained applications, they feature a compact SMB packages with a height of just 0.6mm.

In conclusion, the MXSMBJ5.0A offers superior protection against electrical transients in high-speed data and signal lines applications. The device boasts features such as low capacitance, robust ESD protection and low clamping voltage, making it the ideal choice for applications vulnerable to destructive EMI/RFI events. Furthermore, with its compact SMB package and high operating temperature rating, the diode is well-suited for space-constrained designs and harsh environment conditions.

The specific data is subject to PDF, and the above content is for reference

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