MXSMBJSAC8.5E3 Circuit Protection

Voltage - Clamping (Max) @ Ipp:	14V
Supplier Device Package:	SMBJ (DO-214AA)
Package / Case:	DO-214AA, SMB
Mounting Type:	Surface Mount
Operating Temperature:	-65°C ~ 150°C (TJ)
Capacitance @ Frequency:	30pF @ 1MHz
Applications:	General Purpose
Power Line Protection:	No
Power - Peak Pulse:	500W
Current - Peak Pulse (10/1000µs):	34A
Series:	Military, MIL-PRF-19500
Voltage - Breakdown (Min):	9.44V
Voltage - Reverse Standoff (Typ):	8.5V
Unidirectional Channels:	1
Type:	Zener
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Bulk

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Transient Voltage Suppression (TVS) DiodesTransient Voltage Suppression (TVS) Diodes, also referred to as TVS diodes or TVS devices, are a specialized form of diode designed to protect sensitive electronic components from damage caused by electrical transients, or voltage spikes, which can occur on transmission lines as a result of sudden changes in load, lightning strikes, or grid switching.TVS diodes are unique among TVS devices, as they are two-terminal devices with two doped semiconductor layers forming a p-n junction. This p-n junction provides a low-impedance path for current flow when the applied voltage reaches a specified level, diverting current away from the protected components and allowing the voltage spike to be safely discharged into the soil. As a result, TVS diodes are ideal for use in protecting devices operating in high voltage, high energy applications such as power supplies, remote sensors and diagnostic equipment, HVAC systems, automotive electronics, and telecom applications.The MXSMBJSAC8.5E3 is a very popular TVS diode, providing protection against ESD (electrostatic discharge) and other transients, and is suitable for use in all types of transient voltage suppression applications. This diode has a low Reverse Stand-Off Voltage (Vrwm) of 8.5V, providing minimal stress on the protected device under normal conditions, and can support maximum peak pulse currents up to 530A. The product datasheet also provides very comprehensive Over-Voltage Protection data, with typical damage thresholds (Tr) of 12V, and maximum trigger and/or strike voltages of 17.2V.The operation of the MXSMBJSAC8.5E3 can be defined in terms of its working principle. When the polarity of the applied transient voltage and its corresponding peak current exceed the diode’s breakdown voltage and current levels, respectively, the diode will become saturated, creating a low-impedance path and diverting the voltage spike away from the protected component. The rate at which this happens is also known as ‘Pulse Breakdown Voltage’, or Vbr for short. After the transient is diverted, the diode remains in a more or less ‘open’ state until the voltage and current levels drop once again to their pre-trigger levels, at which point the diode automatically reverts to its ‘off’ state.In addition to providing protection from over-voltage, the MXSMBJSAC8.5E3 also provides protection from under-voltage transients. The device’s low Reverse Stand-Off Voltage (Vrwm) of 8.5V helps to protect the protected devices against sudden increases in voltage, while its low leakage current level helps to protect them against sudden decreases in voltage. This combination of protection ensures the safe operation of the protected devices in all types of transient voltage suppression applications.Overall, the MXSMBJSAC8.5E3 is an ideal diode for protecting devices operating in high voltage, high energy, and high current applications. With its low Reverse Stand-Off Voltage (Vrwm), high break-down voltage and current levels, and low leakage current, this diode provides comprehensive over-voltage and under-voltage protection, ensuring the reliable operation of the protected devices in all types of high voltage applications.

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