MXSMCJLCE11AE3 Allicdata Electronics

MXSMCJLCE11AE3 Circuit Protection

Allicdata Part #:

1086-14676-ND

Manufacturer Part#:

MXSMCJLCE11AE3

Price: $ 12.82
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 11V 18.2V DO214AB
More Detail: N/A
DataSheet: MXSMCJLCE11AE3 datasheetMXSMCJLCE11AE3 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
100 +: $ 11.66320
Stock 1000Can Ship Immediately
$ 12.82
Specifications
Voltage - Clamping (Max) @ Ipp: 18.2V
Supplier Device Package: DO-214AB (SMCJ)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: 100pF @ 1MHz
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Current - Peak Pulse (10/1000µs): 82A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 12.2V
Voltage - Reverse Standoff (Typ): 11V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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Transient Voltage Suppression (TVS) diodes are a form of semiconductor device, used primarily for prevention of electrical overstress (EOS) or electrical surge damage. The MXSMCJLCE11AE3 TVS diode is a high-performance device specifically designed to provide a reliable solution to transient voltage protection and EOS damage prevention.

Application Field

The MXSMCJLCE11AE3 diode is designed primarily for application in desktop computers and other consumer electronics products, offering a developed, reliable solution for effective EOS protection. This device is suitable for applications and systems operating either with an AC or DC power supply. Furthermore, the MXSMCJLCE11AE3 has a very low capacitance level, ensuring a very low insertion loss without compromising the device’s performance.

Working Principle

When an overstress is encountered, the TVS diode acts as a clamp, conducting current away from the vulnerable circuits and redirecting it to ground. The diode is designed to provide fast, reliable protection in the event of an EOS or surge event. The MXSMCJLCE11AE3 offers a combined clamping and absorption capability that guards against not only overvoltage, above a certain threshold voltage, but also against sub-threshold voltage conditions which can cause a very slow degradation of circuit performance and stability. The device has a typical clamping voltage of 11V at an Ipp of 3A (with some variation based on the current density).

This device also has an integrated ESD protection function that provides a high-performance, redundant level of protection in the event of an Electrostatic Discharge (ESD) event, ensuring maximum component and circuit protection from potential damage.

In summary, theMXSMCJLCE11AE3 is an effective, reliable solution for EOS protection in a large range of applications and systems, and particularly suitable for applications in desktop computers, laptop and other consumer electronics products, where it provides superior protection from surges, overvoltage, and ESD related damage.

The specific data is subject to PDF, and the above content is for reference

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