MXSMLJ60CAE3 Circuit Protection |
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| Allicdata Part #: | 1086-15078-ND |
| Manufacturer Part#: |
MXSMLJ60CAE3 |
| Price: | $ 12.48 |
| Product Category: | Circuit Protection |
| Manufacturer: | Microsemi Corporation |
| Short Description: | TVS DIODE 60V 96.8V DO214AB |
| More Detail: | N/A |
| DataSheet: | MXSMLJ60CAE3 Datasheet/PDF |
| Quantity: | 1000 |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
| 100 +: | $ 11.34360 |
| Voltage - Clamping (Max) @ Ipp: | 96.8V |
| Supplier Device Package: | DO-214AB |
| Package / Case: | DO-214AB, SMC |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -65°C ~ 150°C (TJ) |
| Capacitance @ Frequency: | -- |
| Applications: | General Purpose |
| Power Line Protection: | No |
| Power - Peak Pulse: | 3000W (3kW) |
| Current - Peak Pulse (10/1000µs): | 31A |
| Series: | Military, MIL-PRF-19500 |
| Voltage - Breakdown (Min): | 66.7V |
| Voltage - Reverse Standoff (Typ): | 60V |
| Bidirectional Channels: | 1 |
| Type: | Zener |
| Moisture Sensitivity Level (MSL): | -- |
| Part Status: | Active |
| Lead Free Status / RoHS Status: | -- |
| Packaging: | Bulk |
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When it comes to TVS - Diodes, most people do not think of the MXSMLJ60CAE3. This is because this type of product is more often associated with industrial and engineering applications and not necessarily everyday consumer products. However, the MXSMLJ60CAE3 has some unique advantages in certain applications and is gaining more recognition within the TVS - Diode space.
The MXSMLJ60CAE3 belongs to a family of metal oxide semiconductor transorbs, which are designed to protect sensitive electronic circuitry from overvoltage stress, such as electrostatic discharge (ESD) and transients. It is commonly referred to as a transient voltage suppressor (TVS) diode due to its ability to suppress voltage spikes above its rated breakdown (clamping) voltage.
The MXSMLJ60CAE3 is designed to provide excellent performance in high-frequency, high-voltage applications in a variety of industrial and automotive environments. In particular, this device is designed to aid in protecting equipment from ESD, lightning, and inductive transients. They provide high-level protection from voltage transients up to 6kV (peak) and feature a low dynamic resistance that is suitable for a wide array of back-end protection solutions.
This series of product from MXS is designed to connect directly to the IC’s power and ground pins, as well as between two complementary signals, to minimize the disruption of normal signal propagation. The lack of rectifier diodes in this series of product allows it to provide ultra-low capacitance, which is ideal for high-speed digital circuits. Additionally, it has a low internal inductance, which helps to provide excellent ESD protection.
The MXSMLJ60CAE3 is designed to offer protection from excessive current, voltage, and temperature. It features fast reaction time with good clamping characteristics and low power dissipation. The device provides an effective solution for a wide range of high-frequency, high-voltage applications found in industrial, automotive, telecommunications, and consumer electronics applications.
The MXSMLJ60CAE3 is a low leakage, low capacitance transient voltage suppression device. It is designed for the protection of sensitive electronic circuits from voltage transients and ESD that exceeds the rated working voltage of the device. The device has a fast-acting clamping voltage that responds quickly to overvoltage surges and it has excellent clamping performance characteristics.
When an overvoltage surge or ESD occurs, the device can quickly clamp the surge to a defined maximum voltage in order to protect the device. This happens by the current path being opened across the device’s active p-n junction. The device is highly reliable due to its thermal operation and reverse polarity protection.
The operation of the MXSMLJ60CAE3 is achieved by the interaction between the semiconductor and the metal oxide layers. The metal oxide layers creates an insulating barrier that protects the semiconductor from ESD and overvoltage stress. When an ESD situation occurs, the device quickly reaches its breakdown voltage which clamps the voltage level at a maximum value, protecting the sensitive circuitry from the overvoltage.
The MXSMLJ60CAE3 is a versatile device that is suitable for a wide range of applications in industrial, automotive, telecommunications, and consumer electronics. It is a reliable solution for protection against overvoltage and ESD surges. It features fast reaction time with good clamping characteristics and low power dissipation. This product series offers an effective solution at providing ESD and overvoltage protection from wide variety of applications.
The specific data is subject to PDF, and the above content is for reference
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| MXSMLJ60CAE3 | Microsemi Co... | 12.48 $ | 1000 | TVS DIODE 60V 96.8V DO214... |
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| MXSMCG11A | Microsemi Co... | 12.66 $ | 1000 | TVS DIODE 11V 18.2V DO215... |
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| MXSMLJ7.0A | Microsemi Co... | 12.82 $ | 1000 | TVS DIODE 7V 12V DO214AB |
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| MXSMCG170CA | Microsemi Co... | 12.31 $ | 1000 | TVS DIODE 170V 275V DO215... |
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| MXSMCJ36A | Microsemi Co... | 12.36 $ | 1000 | TVS DIODE 36V 58.1V DO214... |
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| MXSMLG48CA | Microsemi Co... | 12.73 $ | 1000 | TVS DIODE 48V 77.4V DO215... |
| MXSMLJ9.0AE3 | Microsemi Co... | 12.82 $ | 1000 | TVS DIODE 9V 15.4V DO214A... |
| MXSMBJSAC50 | Microsemi Co... | 13.61 $ | 1000 | TVS DIODE 50V 88V DO214AA |
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MXSMLJ60CAE3 Datasheet/PDF