MXSMLJ170AE3 Allicdata Electronics

MXSMLJ170AE3 Circuit Protection

Allicdata Part #:

1086-14992-ND

Manufacturer Part#:

MXSMLJ170AE3

Price: $ 12.82
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 170V 275V DO214AB
More Detail: N/A
DataSheet: MXSMLJ170AE3 datasheetMXSMLJ170AE3 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
100 +: $ 11.66320
Stock 1000Can Ship Immediately
$ 12.82
Specifications
Voltage - Clamping (Max) @ Ipp: 275V
Supplier Device Package: DO-214AB
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 3000W (3kW)
Current - Peak Pulse (10/1000µs): 11A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 189V
Voltage - Reverse Standoff (Typ): 170V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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TVS - Diodes provide protection from electrical transients of any magnitude as high as thousands of volts. TVS diodes are used to protect devices from electrostatic discharge and electrical transients caused by lightning, inductive transients, electrostatic discharge (ESD), power cross, and load dump. The MXSMLJ170AE3 is a TVS diode with a peak pulse power rate (PPR) rating of 40 volts. It is used to provide protection for circuits that are sensitive to electrical transients including supervisory circuits, digital logic circuits, bus interfaces, medical circuits, and telecommunications lines.

The MXSMLJ170AE3 diode is a bidirectional, low capacitance TVS diode that is designed to protect high speed circuits from voltage transients. It is composed of a series of components including two avalanche diodes, a Schottky diode and a junction field effect transistor (JFET). The two avalanche diodes are connected in reverse in order to reduce the reverse-bias breakdown voltage. The Schottky diode allows fast switching and helps to reduce the capacitance in the circuit. The JFET works in conjunction with the Schottky diode to provide a shunt path for the voltage transient to ground, thereby protecting the device from damage.

The working principle of the MXSMLJ170AE3 TVS diode is based on the principle of Zener breakdown. When an electrical signal passes through the diode, the Zener voltage causes current to flow through the diode at a rate greater than the amount that the diode can handle. This causes an avalanche breakdown at the P+ and N+ junction where the current passes through. This avalanche breakdown creates a shunt path for the current, diverting it away from the device, thus protecting it from overvoltage.

The MXSMLJ170AE3 diode can be used in applications where a low capacitance is required, such as in high-speed digital circuit boards, where the diodes need to react quickly to a transient voltage. It can also be used in applications where a lower voltage rating is required, such as in automotive and medical applications. It can also be used in devices such as lightning protection units (LPUs), line voltage observations (LVO) circuit protectors, and SMPSES (Switch Mode Power Supplies).

The MXSMLJ170AE3 TVS diode is a reliable protection device that is suitable for a variety of applications. It is effective at protecting circuits from voltage transients of any magnitude as high as 40 volts. Its low capacitance makes it ideal for high-speed digital circuits and its lower voltage rating makes it suitable for automotive and medical applications. Its effectiveness, reliability, and low capacitance make the MXSMLJ170AE3 an ideal choice for any application where protection from voltage transients is needed.

The specific data is subject to PDF, and the above content is for reference

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