MXSMLJ33CAE3 Allicdata Electronics

MXSMLJ33CAE3 Circuit Protection

Allicdata Part #:

1086-15030-ND

Manufacturer Part#:

MXSMLJ33CAE3

Price: $ 12.48
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 33V 53.3V DO214AB
More Detail: N/A
DataSheet: MXSMLJ33CAE3 datasheetMXSMLJ33CAE3 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
100 +: $ 11.34360
Stock 1000Can Ship Immediately
$ 12.48
Specifications
Voltage - Clamping (Max) @ Ipp: 53.3V
Supplier Device Package: DO-214AB
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 3000W (3kW)
Current - Peak Pulse (10/1000µs): 56.2A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 36.7V
Voltage - Reverse Standoff (Typ): 33V
Bidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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A TVS diode is an electronic component that is used to protect a circuit from voltage surges and oscillations. A typical TVS diode is the MXSMLJ33CAE3, which has a reverse breakdown voltage of 33V and a transient peak pulse current rating of 500A. This article will discuss the application field and working principle of the MXSMLJ33CAE3.

Application Field

The MXSMLJ33CAE3 TVS diode is suitable for a range of applications, such as consumer electronics, automotive electronics, and industrial automation. This device is suitable for protecting circuits from over-voltage and transients in these applications, and it offers a very high level of protection against ESD (electrostatic discharge) and EFT (electrical fast transient) spikes.

The MXSMLJ33CAE3 can also be used to protect circuits from power line transients, such as lightning or power surges. It features low clamping voltage and power dissipation, making it highly effective in protecting against power line transients. It is also capable of handling high repetition of pulse current waveforms, making it ideal for a range of applications.

Working Principle

The working principle of the MXSMLJ33CAE3 TVS diode is based on the avalanche breakdown principle. When the diode is exposed to a voltage greater than the reverse breakdown voltage, it triggers a process called the avalanche effect. This effect is caused by the sudden increase in the number of charge carriers in the diode, resulting in a rapid increase of current. As the current increases, the voltage across the diode is rapidly reduced, and this is what provides the protection.

When the transient pulse current waveform is applied to the diode, the avalanche effect causes a sudden drop in the voltage across the diode. This helps to protect the circuit from overvoltage and transient spikes by limiting the peak voltage. The MXSMLJ33CAE3 is designed to provide reliable protection from transients that may cause damage or destruction to the circuit.

The MXSMLJ33CAE3 is a very reliable and efficient device for protecting circuits from over-voltage and transients. It can handle high repetition pulse currents and offers a high level of protection from ESD and EFT spikes. It is suitable for a range of applications, such as consumer electronics, automotive electronics, and industrial automation.

The specific data is subject to PDF, and the above content is for reference

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