NB7L14MN1TWG

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The NB7L14MN1TWG device from ON Semiconductor is a low-voltage differential-signal gate driver designed to drive MOSFETs and IGBTs in high-side, half-bridge and full-bridge configurations. It is suitable for use in automotive, consumer electronics, industrial motor control, power-supply, and other similar applications.

The device is intended to control power devices up to 40 V. Built on an advanced process technology and a monolithic architecture, the NB7L14MN1TWG integrates three low-noise high-gain N-channel MOSFET transistors and all the active components needed to support the driving tasks of a full bridge. The NB7L14MN1TWG device is built into a thermally efficient and compact 6-pin SOT-723 package, allowing for higher density circuit board layout and achieving a smaller form factor.

The NB7L14MN1TWG device provides an integrated level translation circuit to control an external power device using a very low drive voltage (2.7 V). It features an integrated level-shift circuit to provide voltage compatibility between the control logic and power device. It also features an adjustable dead-time control (DTC) stage which can be used to configure the part for leading or trailing edge dead band. The dead band is adjustable between 0 and 100 ns, to allow the designer to match the timing to their application requirements.

The low power consumption of the NB7L14MN1TWG means that it can be used in battery-operated and low-power consumer devices. The low power consumption also helps minimize device heating as well as minimizing power dissipation, thereby lowering system costs.

The NB7L14MN1TWG device provides an optimized soft-start capability and can be configured to achieve higher current during startup to reduce the effects of overshoot and ringing. It also provides fast current limiting during fault conditions, which is important in systems with high-side MOSFET current flowing through the N-channel.

In addition, the device can be configured such that the P-channel driver is disabled when the logic input voltage is lower than the power device operating voltage, providing optimum power efficiency and extending the battery life of the device. It also has under-voltage lockout capability, preventing it from operating until the gate-drive voltage is higher than the minimum operating voltage of the power device.

In summary, the NB7L14MN1TWG is an integrated, thermally efficient, low-voltage differential-signal gate driver designed to drive MOSFETs and IGBTs in high-side, half-bridge and full-bridge configurations. It provides a level translation circuit to control external power device drivers, integrated dead-time control, low-power consumption and fast current limiting feature during circuit fault conditions. The device is optimized for use in automotive, consumer electronics, industrial motor control, power-supply, and other similar applications.

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