NCV1413BDR2G Discrete Semiconductor Products

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The NCV1413BDR2G is a wideband NPN transistor, designed for a variety of applications within both commercial and consumer electronics, such as wireless and digital consumer electronics, LCD drivers and other power management applications. The NCV1413BDR2G is available in a small surface mount package and features an integrated ESD protection, making it ideal for high quality and reliable high-sensitivity applications.

The NCV1413BDR2G is an array of three independent, depletion-mode, N-channel transistors, each of which has been designed for high frequency, high current applications. It has a built-in resistive de-coupling scheme to limit both displacement currents and speech current common mode injection. The NCV1413BDR2G is also designed for high common-mode rejection ratios to ensure both good linearity and low distortion.

Each transistor in the NCV1413BDR2G has three terminals; the Emitter, Base and Collector, and acts as a typical bipolar junction transistor (BJT): when a small current flows into the Base, a larger current is allowed to flow from the Collector to the Emitter. The amount of current that flows through the transistor is determined by the ratio of resistances between the Base and Collector terminals and the Base and Emitter. This ratio is known as the ‘transistor gain’.

The three transistors in the NCV1413BDR2G are insulated from one another by an isolation layer or InP substrate, which greatly reduces any cross-talk or noise of one transistor leaking into another. The isolation also helps to improve the overall gain of the transistor.

The NCV1413BDR2G is an ideal choice for a variety of applications. These include medium power amplifiers for use in car stereos, LCD drivers for television sets, power amplifiers for portable audio applications, and wireless and digital consumer electronics.

The NCV1413BDR2G is an excellent choice for applications that require high frequency switching, such as switching power supplies and audio amplifiers. It is also suitable for both low and high power applications, thanks to its high peak current and high voltage capability. Furthermore, it offers low input current, improved switch on-times and reduced noise levels, making it a great choice for high-quality applications.

In conclusion, the NCV1413BDR2G is a wideband NPN transistor array, with three independent transistors, featuring excellent gain characteristics, high current and high frequency switching capability and a built-in resistive de-coupling scheme. It is ideal for use in car stereos, LCD drivers and other power management applications where high-quality and reliability are required.

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