NCV7351D13R2G

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The NCV7351D13R2G is a quadruple half-bridge isolated gate driver integrated circuit (IC). The device is based on Nexperia\'s NCP5355 design architecture and is intended to drive the gates of 4 external N-channel power MOSFETs or IGBTs.

The NCV7351D13R2G is designed to drive output loads from a variety of sources, including AC or DC voltage signals or NCP5355 (and compatible) logic signals. It is designed to drive up to 4 high-side and 4 low-side power MOSFETs/IGBTs in full- or half-bridge configurations. It also provides an inductive kickback protection for each channel.

The NCV7351D13R2G is a compact, all-in-one, isolated gate drive solution, capable of delivering up to 10A of peak current in a small, 7-mm × 12-mm package. It features low propagation delays and input to output turn-off delays, digitally adjustable gate drive currents and gate thresholds, as well as over-temperature protection.

Application fields

The NCV7351D13R2G is an ideal solution for a variety of applications, including:

• AC/DC motor control
• Reverse parking sensors
• Power switches
• Smart home systems
• High-power load switches
• Automotive lighting
• Industrial control systems
• Brushless DC motor control

Working principle

The NCV7351D13R2G is designed to operate with a supply voltage of 3.3 V to 5.5 V. An on-chip, small-signal diode provides protection against reverse polarity conditions. The device operates with a maximum supply input current of 48 mA. The device operates over a wide range of ambient temperature. It is also protected against electro-static discharge.

The NCV7351D13R2G features four independent half-bridges, each consisting of two N-channel power transistors, allowing it to drive a total of four high-side and four low-side power MOSFETs/IGBTs. Each half-bridge can be individually enabled or disabled by the EN signal, which is typically driven by an NCP5355-compatible logic signal. Each half-bridge is also capable of driving two NCP5355-compatible logic signals.

The NCV7351D13R2G also features an inductive kickback protection for each channel. This protection prevents high-power loads, such as motors, from turning on and off when the supply voltage is still applied. The protection consists of an on-chip, high-voltage, low-capacitance, transient-voltage-suppression (TVS) diode. This diode protects the power MOSFETs/IGBTs against high-energy transients that occur during turn-on and turn-off of the power device.

The device also features a thermal shutdown circuit, which protects the gate drivers against overheating. The thermal shutdown circuit automatically disables the driver channels if the temperature of the IC exceeds a predefined threshold.

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