Allicdata Part #: | NCV7510DWR2G-ND |
Manufacturer Part#: |
NCV7510DWR2G |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | ON Semiconductor |
Short Description: | IC PREDRIVER FLEXMOS 20-SOIC |
More Detail: | High-Side Gate Driver IC Non-Inverting 20-SOIC |
DataSheet: | NCV7510DWR2G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | FLEXMOS™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Driven Configuration: | High-Side |
Channel Type: | Single |
Number of Drivers: | 1 |
Gate Type: | N-Channel MOSFET |
Voltage - Supply: | 4.75 V ~ 5.25 V |
Logic Voltage - VIL, VIH: | 0.8V, 2.2V |
Current - Peak Output (Source, Sink): | -- |
Input Type: | Non-Inverting |
High Side Voltage - Max (Bootstrap): | 50V |
Rise / Fall Time (Typ): | -- |
Operating Temperature: | -40°C ~ 125°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 20-SOIC (0.295", 7.50mm Width) |
Supplier Device Package: | 20-SOIC |
Base Part Number: | NCV7510 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The NCV7510DWR2G is a gate driver developed and manufactured by ON Semiconductor and is a part of their Power Management IC LDO, DC-DC and FETs range. It is specifically designed for driving power MOSFETs and IGBTs for various applications. It features a wide operating range of 6V to 80V and provides an exceptionally high level of performance.
The NCV7510DWR2G is capable of providing high current drive capability that is sufficient to drive a range of MOSFETs, IGBTs and transistors. In addition, it offers integrated protection features that protect the output voltage or current and minimize losses. With its wide range of applications and features, the NCV7510DWR2G can be used in a variety of applications including telecoms, energy conversion, motor control, and security systems.
The NCV7510DWR2G has two separate output pins for each high side and low side. The high side is used for driving the gate of the MOSFET or IGBT and the low side is used for driving the source. It is capable of providing 1A of continuous current and up to 10A of peak current when using an external power supply. The device can be configured to either drive N-channel or P-channel MOSFETs or IGBTs and can be used in applications with a high frequency PWM signal.
The working principle of the NCV7510DWR2G is based on the principle of voltage control. The device is designed to sense the voltage across the MOSFET or IGBT and adjust the output voltage in order to control the current through the device. This ensures that the output current is always in equilibrium with the voltage across the MOSFET or IGBT. The device also has several integrated protection features such as over-voltage, over-temperature, and under voltage protection.
In addition, the NCV7510DWR2G also has advanced features such as fast risetime and falltime, and slew rate control. Fast risetime and falltime are used to reduce the switching losses in the MOSFET or IGBT and improves the overall efficiency. Slew rate control helps to reduce the ringing of the output voltage and minimize EMI.
In conclusion, the NCV7510DWR2G is a highly capable gate driver that can be used in a variety of applications. It is capable of providing high current drive capability and an integrated protection scheme. It has several advanced features such as fast risetime and falltime, and slew rate control that help to improve the efficiency and reduce the EMI of the system.
The specific data is subject to PDF, and the above content is for reference
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