NE461M02-T1-AZ Allicdata Electronics

NE461M02-T1-AZ Discrete Semiconductor Products

Allicdata Part #:

NE461M02-T1-AZTR-ND

Manufacturer Part#:

NE461M02-T1-AZ

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: CEL
Short Description: RF TRANSISTOR NPN SOT-89
More Detail: RF Transistor NPN 15V 250mA 2W Surface Mount SOT-...
DataSheet: NE461M02-T1-AZ datasheetNE461M02-T1-AZ Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: --
Noise Figure (dB Typ @ f): 1.5dB ~ 2dB @ 500MHz ~ 1GHz
Gain: 8.3dB
Power - Max: 2W
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 10V
Current - Collector (Ic) (Max): 250mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89
Base Part Number: NE461
Description

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NE461M02-T1-AZ transistors are part of a line of remismos-bipolar junction transistors, or RF-BJTs. RF-BJTs have a number of application fields and work on a variety of principles. NE461M02-T1-AZ transistors can be used in a variety of applications, such as in radio frequencies, in television, in broadcast, in consumer electronics and more.

RF-BJTs differ from other types of transistors in that they are able to operate in the MHz and GHz range. They have a much greater frequency response than other kinds of transistors, allowing them to be used in high-precision applications. Additionally, because of the high levels of sensitivity, the transistors are able to detect and respond to a range of signals in a variety of situations.

NE461M02-T1-AZ RF-BJTs function by evading saturation, which would normally occur with regular bipolar junction transistors. This means that the transistors are able to amplify a signal without distorting it. This, in turn, gives the transistor a wide dynamic range and a high linearity of response. This type of transistor is also able to switch quickly and accurately between loads, allowing for extremely precise and reliable operation in the MHz and GHz range.

NE461M02-T1-AZ transistors have a number of advantages over other types of transistors. They can be used in applications that require a wide frequency range, and they are able to respond quickly and accurately. Additionally, they require relatively low power consumption and can operate in extreme temperature conditions. Furthermore, they are resistant to thermal and physical stresses, while providing reliable and effective signal switching ability.

NE461M02-T1-AZ transistors are commonly used in RF-BJT applications such as radio transmitters and receivers, television, and other consumer electronics. They can also be used for high-frequency, low-power communication between components, allowing for communication over long-distance and in extreme temperature conditions. The transistors are also used in medical devices and in instrumentation. Additionally, they are used in digital and analog signal processing, as well as in a number of other applications.

In conclusion, NE461M02-T1-AZ transistors are part of a line of remismos-bipolar junction transistors, or RF-BJTs. These transistors have a number of advantageous features and can be used in a variety of applications. Due to their wide dynamic range and fast switching speed, they are particularly useful in high-precision applications in the MHz and GHz range. Additionally, they are resistant to thermal and physical stresses and are able to operate with low power consumption in a variety of temperature conditions.

The specific data is subject to PDF, and the above content is for reference

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