NE46234-AZ

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The NE46234-AZ is a bipolar junction transistor (BJT) specifically designed for radio frequency (RF) applications. It is an NPN double diffusion planar silicon device, with an EBC (Epitaxial Base Region Collector) configuration.

The NE46234-AZ has a relatively low power gain of 5dB, due to its low current gain, which is typically about 16. This is typical of RF bipolar transistors; the high frequency capability is more important than high current gain. It has very low base-emitter capacitance, making it suitable for high-frequency operation.

The NE46234-AZ operates on a supply voltage of 15V, with a maximum DC collector current of 30 mA. This is fairly typical for an RF transistor, as higher power dissipation is usually not needed. The maximum DC collector-emitter voltage rating is 10 V, and the power dissipation is rated at 240 mW for the NE46234-AZ.

The NE46234-AZ can be used for a variety of RF applications, including RF amplifiers, oscillators, frequency converters, as well as for small-signal switching applications. It is particularly useful for narrowband applications due to its low capacitance that limits the bandwidth. It can operate up to a frequency of 250 MHz and has a breakdown voltage of 8V.

The NE46234-AZ has a common emitter configuration, which means the collector is connected to the emitter of the device. This is used to amplify the AC signal in the emitter-collector circuit. The base is used to control the current flowing in the transistor, by altering the resistance in the base-emitter junction. The AC signal is coupled to the base of the transistor via an external capacitor.

The NE46234-AZ is a relatively inexpensive transistor designed for RF applications. It is widely used for general-purpose applications, such as for amplifying signals for AM radio and wireless communications. It is also a popular choice for low-cost RF applications, such as for basic radio transmitters and receivers.

The NE46234-AZ is a reliable and popular choice for RFbiased, small-signal transistor applications. Its low capacitance, low power consumption, and low breakdown voltage all help to ensure reliable operation. Additionally, it is relatively inexpensive and widely available, making it an ideal choice for low-cost RF applications.

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