NE461M02-T1-QS-AZ

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NE461M02-T1-QS-AZ are a type of RF bipolar junction transistor also known as BJT. They are mainly used in the field of radio frequency. These devices are suitable for a range of low noise, low-power RF amplifiers. Some of the most common applications of this kind of devices are in the field of wireless telecom, automotive electronics, industrial automation, medical devices and consumer electronics.

These devices have a very high gain and bandwidth. They also have a low noise figure and low source/drain voltage resistance. They are also highly efficient thermal management, which helps to improve the durability of the device. They also have good spectral purity and stability in operation.

The working principle of NE461M02-T1-QS-AZ is based on the emitter-base junction. The emitter-base junction is a three layer sandwich, with a P-type material at the centre and an N-type material at the two outer sides. When a forward bias is applied to this junction (forward biasing is done by either attaching two positive potentials at the two sides of the junction or by attaching a positive potential to the base and a negative potential to the emitter) the electrons from the emitter are able to cross the junction and travel to the base. At the same time, holes from the base also travel to the emitter. This current travels from the emitter to the collector via the base and is called the collector current.

Moreover, the current gain of this device can be controlled by the absolute value of the collector current. If the collector current is high, the device can achieve a high gain. In addition, the base-emitter voltage has a major role in controlling the current gain of the device. If the voltage is increased, the current gain can also be increased. This makes them ideal for radio frequency applications where high gains at different frequencies are desired.

In summary, NE461M02-T1-QS-AZ are suitable for a range of low noise, low-power RF amplifiers. They have a very high gain and bandwidth, low noise figure and low source/drain voltage resistance. Moreover, they have good spectral purity and stability in operation. The working principle of this device is based on the emitter-base junction and the current gain can be controlled by the absolute value of the collector current and the base-emitter voltage.

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