NE462M02-AZ

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NE462M02-AZ is a Bipolar Junction Transistor (BJT) designed for Radio Frequency (RF) applications. The device has a minimum rated operating frequency of 2GHz, a maximum collector-emitter breakdown voltage of 30V, and a maximum collector current of 7.5A. It is designed to operate in a wide range of temperatures, from -40 to +150°C. The gain of the device is also very high, and reaches a maximum of 10 dB at 2 GHz.

The BJT is based on a basic three-layer structure, consisting of the emitter, base and collector. The field effect of the bipolar junction allows electrons to move from the emitter to the collector, with the base acting as a control gate. This type of device is useful for applications where a high gain and small size are important. The NE462M02-AZ is ideal for high power RF applications, providing excellent low noise and wideband performance. It is also capable of withstanding high-frequency pulsed currents owing to its low inductance characteristics.

The NE462M02-AZ is constructed of an epitaxial silicon base with a silicon dioxide dielectric layer that provides better thermal and electrical stability. The device is also equipped with a low-on-resistance MOSFET (metal-oxide-semiconductor field-effect transistor) with a maximum operating voltage of up to 60V. The MOSFET also provides excellent temperature stability and very low input capacitance.

The NE462M02-AZ is designed to be used in a wide range of RF applications, such as radios and transmitters, microwave amplifiers, and pulsed generators. Due to its high gain and excellent temperature stability, it is ideal for use in high frequency applications. The device has a low base-emitter capacitance, which provides superior signal integrity and excellent high-frequency performance. It is also capable of providing high output power and excellent linearity.

In summary, the NE462M02-AZ is a high-performance Bipolar Junction Transistor ideally suited for use in high-frequency and high-power RF applications. It provides excellent low noise and wideband performance, excellent temperature stability, low-on-resistance MOSFET, and excellent linearity and high output power. Its high gain and small size make it perfect for use in a wide range of applications where high performance is needed.

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