NGD15N41CLT4 Discrete Semiconductor Products |
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Allicdata Part #: | NGD15N41CLT4OSTR-ND |
Manufacturer Part#: |
NGD15N41CLT4 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | IGBT 440V 15A 107W DPAK |
More Detail: | IGBT 440V 15A 107W Surface Mount DPAK |
DataSheet: | NGD15N41CLT4 Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
1 +: | 0.00000 |
Power - Max: | 107W |
Base Part Number: | NG*15N41CL |
Supplier Device Package: | DPAK |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Test Condition: | 300V, 6.5A, 1 kOhm |
Td (on/off) @ 25°C: | -/4µs |
Input Type: | Logic |
Switching Energy: | -- |
Series: | -- |
Vce(on) (Max) @ Vge, Ic: | 2.2V @ 4V, 10A |
Current - Collector Pulsed (Icm): | 50A |
Current - Collector (Ic) (Max): | 15A |
Voltage - Collector Emitter Breakdown (Max): | 440V |
IGBT Type: | -- |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Obsolete |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
IGBTs are a type of transistor that combines the advantages of MOSFETs and bipolar transistors. The abbreviation stands for Insulated Gate Bipolar Transistor. IGBTs are used in power electronic applications where high-frequency switching is required, such as motor drives, power supplies, and welding. NGD15N41CLT4 is a new type of IGBT component developed by ON Semiconductor. This component is single IGBT configured in a cascode configuration, which is suitable for many power applications.
The NGD15N41CLT4 component has a wide range of applications, including but not limited to power conversions, inverters, motor drives, and other power-switching circuits. It\'s suitable for applications where efficiency, power density, and a lower switching loss is required. The device has a maximum current rating of 52A and a blocking voltage of 1500V. The component also exhibits fast switching performance, with a minimum on-resistance of 0.04ohms at 25°C.
Unlike other power transistors, the working principle of IGBTs is quite different. It utilizes two junctions between two terminals instead of just one. This two-terminal configuration is similar to a diode and consists of a gate to control the current flow. The gate voltage can be used to control the amount of current passing through the device. When the voltage applied to the gate is negative, current flows from the emitter to the collector and when the voltage applied to the gate is positive, current flows from the collector to the emitter. This allows for the device to be used as a switch in power switching applications.
The NGD15N41CLT4 component is composed of three major parts; the N-Channel MOSFET, the P-Channel MOSFET, and an integrated Schottky diode. The N-Channel and P-Channel MOSFETs are responsible for controlling the current flow while the integrated Schottky diode helps to reduce switching losses. The component also features low power dissipation, low thermal resistance and low tail current, making it ideal for high-frequency switching applications.
The NGD15N41CLT4 component is a great tool for high-power switching applications and displays fast switching performance. It\'s ideal for power applications such as motor drives, power supplies, and inverters that require fast switching and high efficiency. With its wide range of applications and fast switching performance, the component is ideal for those looking for an efficient, reliable, and cost-effective solution.
The specific data is subject to PDF, and the above content is for reference
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