NGD18N45CLBT4G Discrete Semiconductor Products

Vce(on) (Max) @ Vge, Ic:	2.3V @ 4.5V, 7A
Supplier Device Package:	DPAK
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Test Condition:	300V, 1 kOhm, 5V
Td (on/off) @ 25°C:	420ns/2.9µs
Input Type:	Logic
Switching Energy:	--
Power - Max:	115W
Series:	--
Current - Collector Pulsed (Icm):	50A
Current - Collector (Ic) (Max):	18A
Voltage - Collector Emitter Breakdown (Max):	500V
IGBT Type:	--
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Tape & Reel (TR)

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Introduction to NGD18N45CLBT4GThe NGD18N45CLBT4G is an IGBT (insulated-gate bipolar transistor) with a single, normally off logic structure. It is a power transistor optimized specifically for switching applications with high frequency operation. The device features an industry-standard development package to simplify integration of the device into a system.Application FieldThe NGD18N45CLBT4G is a member of ON Semiconductor\'s SuperMESH3 power transistor family. It is designed for use in a variety of applications, including motor control, industry automation, LED light control, and home appliance power management.The device is particularly suitable for applications where high energy efficiency is critical, such as those requiring low switching and switching-related losses. It offers several benefits over conventional MOSFETs, such as microwave frequency operation, fast switching times, and low and balanced on-state resistance.Working PrincipleThe device is normally off, meaning that it does not conduct current until a positive gate threshold voltage is applied. When a positive gate voltage is applied, the device turns on, allowing current to flow between the collector and emitter.The device features an embedded low-loss low-voltage Schottky diode, with fast switching and reverse recovery time credentials. The Schottky diode allows fast current reversals, preventing current from entering the device during the voltage transition period.The device also features a temperature-independent low-voltage device turn-on capability. This allows for reliable control of on-state resistance, even when the device is operating at elevated temperatures.Lastly, the device is fully qualified under UL 60730-1 safety criteria, which ensures that systems using the device are able to meet safety standards without any additional testing or evaluation.ConclusionThe NGD18N45CLBT4G is a single, normally off logic IGBT transistor with switching capabilities up to microwave frequencies. It offers a variety of benefits compared to conventional MOSFETs, such as fast switching times and low and balanced on-state resistance. It is suited for motor control, industry automation, LED light control and home appliance power management applications where high energy efficiency is desired. It complies with the UL 60730-1 safety criterion and has an embedded low-loss low-voltage Schottky diode for fast current reversals.

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