NGD18N40CLBT4G Allicdata Electronics

NGD18N40CLBT4G Discrete Semiconductor Products

Allicdata Part #:

NGD18N40CLBT4GOSTR-ND

Manufacturer Part#:

NGD18N40CLBT4G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Littelfuse Inc.
Short Description: IGBT 430V 15A 115W DPAK
More Detail: IGBT 430V 15A 115W Surface Mount DPAK
DataSheet: NGD18N40CLBT4G datasheetNGD18N40CLBT4G Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
IGBT Type: --
Voltage - Collector Emitter Breakdown (Max): 430V
Current - Collector (Ic) (Max): 15A
Current - Collector Pulsed (Icm): 50A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 4V, 15A
Power - Max: 115W
Switching Energy: --
Input Type: Logic
Td (on/off) @ 25°C: --
Test Condition: --
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Base Part Number: NG*18N40CL
Description

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An IGBT (Insulated Gate Bipolar Transistor) is a type of transistor that combines the properties of both a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and a BJT (Bipolar Junction Transistor). It offers higher levels of performance than either type of transistor. The NGD18N40CLBT4G transistor is an example of an IGBT in the Single category. This article will discuss the application field and working principle of the NGD18N40CLBT4G.

Application Field of NGD18N40CLBT4G IGBT

The NGD18N40CLBT4G IGBT can be used in a variety of applications, including home appliances, lighting, automotive, power supplies, and even industrial control. It has a wide range of features that make it suitable for these applications, including a low on-state voltage drop, high efficiency, high current capability, and low power loss. In addition, it has a high-temperature operating range and can be used in a wide range of environments.

The NGD18N40CLBT4G IGBT is also well suited for use in industrial equipment, such as power converters, UPS systems, and motor drive systems. Its high-speed and high-current capabilities make it a perfect choice for these applications. It is also a reliable and cost-effective choice, making it a great option for industrial control applications.

Working Principle of NGD18N40CLBT4G IGBT

The NGD18N40CLBT4G IGBT is composed of three sections – the collector, the gate, and the emitter. When the gate is not being used, the transistor is in the "off" state, meaning no current is flowing through it. However, when the gate is activated, it causes a voltage to be applied to the collector, which causes current to flow through the transistor. This current then flows from the collector to the emitter, resulting in an amplified output signal.

The NGD18N40CLBT4G IGBT is a high-speed, high-current transistor and it is capable of switching quickly between on and off states. It is also capable of producing a large output current at a range of output voltages. It is well suited for applications that require high speed, such as motor drives, UPS systems, and power converters. Additionally, it has low power loss and is highly efficient.

Conclusion

The NGD18N40CLBT4G IGBT is a single type of IGBT that is capable of providing high-speed and high-current performance in a variety of applications. Its low on-state voltage drop, high efficiency, and low power loss make it an ideal choice for industrial control applications. It is also a reliable and cost-effective option, making it a great option for industrial equipment, such as power converters, UPS systems, and motor drive systems.

The specific data is subject to PDF, and the above content is for reference

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