NGD18N40ACLBT4G Discrete Semiconductor Products

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The NGD18N40ACLBT4G is a single IGBT (Insulated Gate Bipolar Transistor) device, specifically designed to meet the requirements of medium-power applications spanning a wide range of industries. It is suitable for use in applications such as lighting, renewable energy sources, HVAC, and power conversion systems.

An IGBT is a type of transistor that combines the benefits of both a bipolar junction transistor (BJT) and a field effect transistor (FET), into a single adjustable current device. Unlike a BJT, the IGBT does not require base current to turn it on, instead relying on an externally-controlled gate to control current flow. This reduces the overall power dissipation of the device and makes it more reliable.

Structurally, the NGD18N40ACLBT4G consists of two N-channel MOSFETS and a PNP bipolar transistor sandwiched together in a single package. The MOSFETs are responsible for conducting the current, while the PNP is responsible for switching it on and off, in response to gate voltage. This gate voltage is controlled externally, by applying a voltage across the gate-emitter terminals. The device has an isolated metal tab interface, allowing it to be easily integrated with other components of the system.

The device offers superior power cycling and switching performance, with a maximum rated peak current of 18A and a maximum continuous on-state current of 16A. It is designed for a wide range of operating voltages, from 10 to 600V, and features a fast rise time of 10ns and a fall time of 15ns.

The NGD18N40ACLBT4G has many features that make it well-suited for applications such as lighting, renewable energy sources, HVAC, and power conversion systems. It is highly efficient, with an insulated gate structure and low gate-emitter capacitance which ensures low switching losses. It also has high noise immunity, excellent surge insulation, and a wide temperature range of -40°C to 175°C.

Overall, the NGD18N40ACLBT4G is an ideal choice for a wide range of applications, offering a fast switching speed, excellent thermal characteristics, and a high current rating. It is also highly versatile, capable of operating under a wide range of temperatures and voltages, making it suitable for use in environments where thermal or voltage performance is critical.

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