NGD8201ANT4G Discrete Semiconductor Products

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The NGD8201ANT4G is a high performance, single IGBT within Fairchild Semiconductor\'s series of 900 V trench gate IGBTs (Insulated Gate Bipolar Transistors). This device is designed as a robust solution for high power industrial, consumer and smart energy applications. The modulated gate design of the BE-IGBT provides increased device efficiency and improved performntace when combining hot forward conduction and low reverse conduction losses.

The NGD8201ANT4G is an ideal device solution for applications that require high performance combined with low gate drive power requirements. It is particularly useful in applications such as Induction heating, Solar Inverters, Wind Turbines, Utility Grid Connected Networks and Industrial Automation. This device also provides high levels of robustness, reliability and long-term longevity due to its 900 V trench gate architecture and advanced surface passivation process.

The NGD8201ANT4G features low voltage drop (Vce(sat)) and low on-state losses (Eon) which, combined with its low turn-OFF gate charge, give it a high level of efficiency at high temperatures. Its avalanche rated construction and high voltage blocking capability ensure that it is able to operate safely in applications such as inverters, solar systems and utility solar stations.

The working principle of the NGD8201ANT4G is relatively simple: when the voltage across the device\'s gate and emitter is activated, an electrical current (IEP) is generated in the circuit. This current creates a field which causes electrons to be pulled from the base region towards the emitter, while holes are pulled from the emitter towards the collector. As the current increases, the resistance between the collector and emitter terminals decreases, resulting in an increase in current flow.

The IGD8201ANT4G therefore acts like a switch, allowing current to flow between the collector and emitter when voltage is applied at the gate. It also serves to amplify the current in the circuit, providing more power for the load. This power is often used to activate higher power devices with lower current requirements in order to reduce the energy requirements of the entire system.

Overall, the NGD8201ANT4G is a versatile, high performance device, offering exceptional efficiency and reliability. Its 900 V trench gate architecture provides robustness and long-term longevity, while its advanced surface passivation process ensures safe operation in high power applications. It is a great choice for industrial, consumer and smart energy applications, such as induction heating, solar inverters, wind turbines and utility grid connected networks.

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