NGD8201NT4G Discrete Semiconductor Products

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An NGD8201NT4G is a high-performance 1000V insulated-gate bipolar transistor (IGBT) device built with a chips design structure of short emitter base structure, Thin wafer chip technology, a robust buffer layer and terminal connection technology, in order to provide a better performance and temperature capability.

NGD8201NT4G is a single IGBT that offers impressive low saturation voltage, and unique characteristics in isolation, fast switching performance as well as superior current handling capabilities. This type of IGBT is suitable for usage in a diverse range of applications, ranging from switching to welding, high frequency and soft switching.

The Application Field of NGD8201NT4G

NGD8201NT4G is a high-voltage IGBT that is commonly used in automobiles, motor control, power supplies and many other commercial, industrial and military applications. This IGBT is an ideal choice for the current control needs of motor drive systems in the automotive industry due to its low saturation voltage, fast switching capability and soldering reliability. Furthermore, the IGBT can be used in motor drive, DC-DC power conversion, voltage and current regulator circuits, switching power supplies, switching regulators and other high-frequency applications.

The NGD8201NT4G is, for example, also an excellent choice for applications that require high voltage isolation, resistance to high temperatures and fast switching. Such applications include power inverters, converters and digital power supplies. Furthermore, the IGBT features excellent thermal capability and can be used in any application field with its ability to operate at high temperatures.

The Working Principle of NGD8201NT4G

The working principle of NGD8201NT4G is based on the concept of an insulated gate field effect transistors (IGFET). IGFETs uses a gate charge which allows the on and off switching of the conduction path of the device. In the NGD8201NT4G IGBT, the gate charge is managed by a buffer layer so that the switching speed of the device is improved.

The buffer layer insulating the gate charge from the switching junction, also known as the base-collector junction. This junction is used as the main switching element of the device. When a potential is applied to the gate, it causes the base-collector junction to decreases which results in the switching of the device from a nonconductive to a conductive state. A decrease in the base-collector junction allows current to flow and the device to operate.

When the gate charge is removed, the base-collector junction returns to its off state and the current stops flowing. This is how the switching of the device is achieved. The main benefit of this principle of operation is that the device can be switched quickly and with a high switching frequency. This enables the device to be used in various power control applications.

In summary, the NGD8201NT4G IGBT is a high-performance insulated-gate bipolar transistor (IGBT) device which offers impressive low saturation voltage, fast switching speed and superior current handling capabilities. This type of IGBT is suitable for usage in a wide range of applications, including motor drive systems in the automotive industry, power inverters, converters and digital power supplies, voltage and current regulator circuits, switching power supplies and switching regulators. The working principle of the device is based on an insulated gate field effect transistors (IGFET) and its main benefit is that it can be switched quickly and with a high switching frequency.

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