Allicdata Part #: | NGD8201BNT4G-ND |
Manufacturer Part#: |
NGD8201BNT4G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Littelfuse Inc. |
Short Description: | IGBT 400V 20A 125W DPAK-3 |
More Detail: | IGBT 430V 15A 115W Surface Mount DPAK |
DataSheet: | NGD8201BNT4G Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Vce(on) (Max) @ Vge, Ic: | 1.8V @ 4.5V, 10A |
Supplier Device Package: | DPAK |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Test Condition: | 300V, 6.5A, 1 kOhm |
Td (on/off) @ 25°C: | -/4µs |
Input Type: | Logic |
Switching Energy: | -- |
Power - Max: | 115W |
Series: | -- |
Current - Collector Pulsed (Icm): | 50A |
Current - Collector (Ic) (Max): | 15A |
Voltage - Collector Emitter Breakdown (Max): | 430V |
IGBT Type: | -- |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
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NGD8201BNT4G is a type of power electronics transistor used in switching applications. It\'s a single-channel IGBT, meaning it\'s made of one IGBT with no additional components added. This makes it ideal for applications where cost is a priority.
IGBT stands for Insulated-Gate Bipolar Transistor and it\'s a key component in the field of power electronics. It combines the benefits of both metal-oxide-semiconductor field-effect transistors (MOSFET) and bipolar junction transistors (BJT). This combination gives IGBTs superior properties that make them suitable for a wide range of applications.
The NGD8201BNT4G has a wide range of applications from industrial motor control to electric vehicles. It\'s also suitable for high-frequency applications such as power converters. The device has a low turn-on voltage, making it suitable for high-efficiency designs.
In order to understand how this device works, it\'s important to understand how transistors work. A transistor is a three-terminal semiconductor device that can switch between two states on/off. The two states are determined by the control voltage applied to the gate terminal of the device. The current flow through the device will be determined by the voltage applied to the gate.
The NGD8201BNT4G uses an insulated-gate structure that is optimized for power switching applications. This means it has a high breakdown voltage, making it reliable and robust. The combination of its high voltage and low turn-on voltage makes it suitable for high-efficiency designs.
The device also has an optimized gate charge characteristics, meaning it has a high switching frequency. This makes it suitable for high-frequency applications such as motor control and power conversion. The device is also capable of handling large amounts of power, making it suitable for applications such as electric vehicles.
In addition, the NGD8201BNT4G has a high voltage blocking capability, meaning it can withstand high voltage spikes. This makes it suitable for use in high-voltage applications such as wind power and solar power systems.
The device also has a fast switching time, making it suitable for use in automotive applications. This means it can turn on and off quickly, which is important for powertrain control. The device also has a low noise level, making it suitable for audio applications.
Overall, the NGD8201BNT4G is a highly-capable single-channel IGBT with a wide range of applications. It has superior switching characteristics and high power handling, making it suitable for both industrial and automotive applications. The device has a low turn-on voltage, making it suitable for high-efficiency designs. Its optimized gate charge characteristics give it a high switching frequency and its high voltage blocking capability make it suitable for high-voltage applications. The fast switching time and low noise level make it suitable for automotive and audio applications.
The specific data is subject to PDF, and the above content is for reference
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