NGD8205ANT4G Discrete Semiconductor Products |
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Allicdata Part #: | NGD8205ANT4GOSTR-ND |
Manufacturer Part#: |
NGD8205ANT4G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Littelfuse Inc. |
Short Description: | IGBT 390V 20A 125W DPAK-3 |
More Detail: | IGBT 390V 20A 125W Surface Mount DPAK |
DataSheet: | NGD8205ANT4G Datasheet/PDF |
Quantity: | 1000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
IGBT Type: | -- |
Voltage - Collector Emitter Breakdown (Max): | 390V |
Current - Collector (Ic) (Max): | 20A |
Current - Collector Pulsed (Icm): | 50A |
Vce(on) (Max) @ Vge, Ic: | 1.9V @ 4.5V, 20A |
Power - Max: | 125W |
Switching Energy: | -- |
Input Type: | Logic |
Td (on/off) @ 25°C: | -/5µs |
Test Condition: | 300V, 9A, 1 kOhm, 5V |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Base Part Number: | NGD8205 |
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The NGD8205ANT4G is a single IGBT power transistor that operates at a 600V rating with a maximum operating temperature of 150 °C. This transistor is designed for use in applications that require high switch speed and power efficiency.
The IGBT is a type of transistor that combines the elements of a bipolar junction transistor and a field effect transistor. This transistor is commonly used in medium- and high-power switching applications due to its high efficiency and low saturation voltage.
Here are some of the key features of the NGD8205ANT4G IGBT transistor:
- High efficiency
- Low saturation voltage
- High switching speed
- High power dissipation capability
The NGD8205ANT4G IGBT transistor is primarily used in applications such as motor control, power converters, solenoid control, and uninterruptible power supplies. This type of transistor is great for applications where efficiency and low voltage drops are desired.
This transistor has a base and collector, just like a bipolar transistor. However, instead of a base charge, the controlling signal is a voltage signal. When a voltage is applied across the gate and emitter terminals, a signal is sent to the base and collector regions. This creates a conducting channel between the collector and emitter terminals, allowing current to flow.
The main advantage of an IGBT transistor is that it allows for low voltage drops. When the transistor is in the OFF state, the voltage drop across the transistors is very low. This helps to increase the overall efficiency of the application, as less power is lost in the form of heat.
Another advantage of an IGBT transistor is that it can be used in high power, high frequency applications. This allows for increased switching speed and improved power efficiency. The NGD8205ANT4G IGBT transistor has a maximum frequency of 200kHz, which is higher than some other types of transistors such as BJTs.
Finally, the NGD8205ANT4G IGBT transistor has a very wide operating temperature range. This range runs from -40°C to 150°C, allowing the transistor to be used in a variety of applications, both indoors and outdoors.
In conclusion, the NGD8205ANT4G is a single IGBT transistor that can be used in a variety of applications, due to its high efficiency, low saturation voltage, and wide operating temperature range. The transistor offers good power efficiency and switching speed, making it ideal for applications such as motor control, power converters, solenoid control, and uninterruptible power supplies.
The specific data is subject to PDF, and the above content is for reference
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