NP043A200A Discrete Semiconductor Products |
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Allicdata Part #: | NP043A200ATR-ND |
Manufacturer Part#: |
NP043A200A |
Price: | $ 0.22 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS NPN/PNP SSSMINI6 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP -... |
DataSheet: | NP043A200A Datasheet/PDF |
Quantity: | 10000 |
10000 +: | $ 0.20484 |
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: | 60 @ 5mA, 10V |
Base Part Number: | NP043A2 |
Supplier Device Package: | SSSMini6-F1 |
Package / Case: | SOT-963 |
Mounting Type: | Surface Mount |
Power - Max: | 125mW |
Frequency - Transition: | 150MHz, 80MHz |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | 22 kOhms |
Resistor - Base (R1): | 22 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 80mA |
Transistor Type: | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
Description
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NP043A200A Application Field and Working PrincipleNP043A200A is a type of bipolar junction transistor (BJT) array that has been pre-biased. It is a three-terminal device with a common collector and two emitters, one for positive and one for negative current conduction. This type of BJT has several unique operations compared to other types of BJT, allowing it to be used in a wide variety of applications. The first and major advantage of NP043A200A devices is their ability to create a current gain or amplification. This is due to their high-efficiency operation in which they can produce a large current output while consuming minimal additional current. Unlike other types of BJT devices, NP043A200A BJTs do not require a transistor bias voltage or resistor, allowing them to be used in high voltage, low current applications. Additionally, the device is able to create a current gain of over 20%.NP043A200A BJTs have several advantages compared to other types of BJT devices. For instance, NP043A200A BJTs have an inherently wide operating range, allowing them to be used in a wide variety of conditions. This is due to the device’s excellent temperature stability which is much better than other types of BJTs. This temperature stability allows for reliable operation even in applications such as automotive electronics where extreme temperature variations are commonplace. Furthermore, the device’s wide operating range allows it to be used in high-frequency applications where fast switching times are required.In terms of its applications, NP043A200A BJT can be used in a variety of automotive, industrial, and consumer electronic applications. It is primarily used in power management applications due to its excellent current gain characteristics. For instance, it is often used as a power switch in automotive electronics, where it can be used to control the electrical power provided to various components. It is also used in industrial applications such as medical imaging, where it can be used to amplify the signal before being sent to the imaging device. Finally, it is often used in communications devices to provide gain. In terms of working principles, NP043A200A BJTs operate on the same principle as any other BJT device. They are a three-terminal device consisting of a base, collector, and emitter. A current is applied to the base, which allows the current flowing from the collector to the emitter to be amplified. This current gain is determined by the ratio between the collector current to the base current, and is usually dependent on the emitter current. In conclusion, NP043A200A BJTs are a type of pre-biased BJT array which can be used in a variety of applications due to their wide operating range and excellent current gain characteristics. They are used primarily in power management applications as well as automotive, industrial, and consumer electronics applications. They operate using the same basic principles as any other type of BJT, and the current gain is determined by the ratio between the collector current to the base current.The specific data is subject to PDF, and the above content is for reference
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