NP0G3A300A Discrete Semiconductor Products

DC Current Gain (hFE) (Min) @ Ic, Vce:	80 @ 5mA, 10V
Base Part Number:	NP0G3A3
Supplier Device Package:	SSSMini6-F1
Package / Case:	SOT-963
Mounting Type:	Surface Mount
Power - Max:	125mW
Frequency - Transition:	150MHz, 80MHz
Current - Collector Cutoff (Max):	500nA
Vce Saturation (Max) @ Ib, Ic:	250mV @ 300µA, 10mA
Series:	--
Resistor - Emitter Base (R2):	47 kOhms
Resistor - Base (R1):	47 kOhms
Voltage - Collector Emitter Breakdown (Max):	50V
Current - Collector (Ic) (Max):	80mA
Transistor Type:	1 NPN, 1 PNP - Pre-Biased (Dual)
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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Introduction to NP0G3A300A

NP0G3A300A is a pre-biased gallium nitride field effect transistor (GaN FET) array. It is designed to offer an unprecedented power handling capability enabling superior performance across a broad variety of applications. It is a key component in the field of power electronics, where it can be used to power high-frequency, high-power applications.The device features a monolithic semiconductor technology that provides excellent thermal performance, low board temperature and superior electrical performance. Its three-stage architecture provides superior, low-impedance, and wide-dynamic range performance when compared to other GaN arrays.

Applications of NP0G3A300A

The NP0G3A300A is well suited for power electronic applications that require high-power, high-frequency operation. As such, it has been widely used in applications such as motor drive, drones and power converters.The device is also a favored choice for industrial energy and process control applications, which often require a high-speed, high-power solution to drive power devices such as solenoids and relay coils.Finally, the device is an ideal choice for DC/DC converters, where its high power density, low gate charge and low turn-on time make it an ideal solution for both 48V and 12V automotive systems.

Working Principle of NP0G3A300A

The working principle of the NP0G3A300A is based on field-effect transistor (FET) technology. It utilizes Gallium Nitride (GaN) semiconductor materials and a multi-stage architecture capable of providing superior power density, low gate charge and fast switching times.The device is powered by a gate voltage, which then drives current through the device. This current can then be used to control a device or a process. The device has two inputs, a gate and a source, and two outputs, a drain and a source. The device acts as a switch or an amplifier, depending on the voltage applied to the gate.

Conclusion

The NP0G3A300A is a pre-biased GaN FET array that is designed to deliver superior performance and power handling capability in power electronics applications. It is ideal for industrial and automotive applications, offering impressive power density, low gate charge and fast switching times. The device utilizes FET technology and operates based on the flow of current that is driven by a gate voltage.

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