NP0G3D100A Discrete Semiconductor Products |
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Allicdata Part #: | NP0G3D100ATR-ND |
Manufacturer Part#: |
NP0G3D100A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS NPN/PNP SSSMINI6 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP -... |
DataSheet: | NP0G3D100A Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 80mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 4.7 kOhms, 47 kOhms |
Resistor - Emitter Base (R2): | 4.7 kOhms, 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 20 @ 5mA, 10V / 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 150MHz, 80MHz |
Power - Max: | 125mW |
Mounting Type: | Surface Mount |
Package / Case: | SOT-963 |
Supplier Device Package: | SSSMini6-F1 |
Base Part Number: | NP0G3D1 |
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NP0G3D100A is a high-speed, pre-biased array of bipolar junction transistors (BJT), used in telecommunications and electronic designs. It is built on integrated circuit die, and its design is based on a patented semiconductor process. The NP0G3D100A is an array of three transistors, arranged in a vertical column, which are all pre-biased to the common enabled state. This makes the NP0G3D100A a digital-only array, as the second transistor must remain energised for any of the digital signals to be used. This pre-biasing also allows for higher speed operation, as switching is not required for each digital signal.
The working principle of NP0G3D100A is based on the properties of bipolar transistors. The three transistors are arranged in a cascode configuration, where the base of one transistor is connected to the collector of the next. A gate signal is provided to the transistor at the top of the array, which in turn drives the other two transistors. This makes it possible to control the flow of current between the collector and emitter of each transistor. By controlling the current flow through the transistors, the output of the array can be changed to produce the desired digital output.
The NP0G3D100A can be used in a wide variety of applications, including telecommunications, radio-frequency (RF) amplifiers, power supplies, and medical imaging. In telecommunications, the NP0G3D100A can be used to amplify digital signals for transmission over long distances. It can also be used to create high-frequency filters that allow specific frequencies to pass, while blocking others. In power supplies and medical imaging, the NP0G3D100A can be used to create pulsewidth modulation (PWM) controllers, which can precisely vary the current or voltage in an electronic circuit.
The NP0G3D100A can also be used as a voltage regulator, to provide a steady output voltage to a load. This allows it to be used in precision circuits, where a stable reference voltage is required. For example, this voltage regulator can be used as the reference voltage for a temperature sensor, to ensure that its output is accurate. In addition, the NP0G3D100A can be used in RF amplifiers, to boost the signal strength before transmission.
The NP0G3D100A is a versatile and powerful pre-biased array of BJTs that can be used in a variety of applications. Its pre-biased configuration makes it ideal for high speed operations, and its versatility makes it suitable for a range of applications. The array can be used to amplify digital signals, create high frequency filters, and control the voltage or current in a circuit. It can also be used as a voltage regulator, to provide a steady reference voltage, or to boost the signal strength of RF amplifiers. This makes the NP0G3D100A a vital component in telecommunications and electronic designs.
The specific data is subject to PDF, and the above content is for reference
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