NPTB00004A Allicdata Electronics
Allicdata Part #:

1465-1410-ND

Manufacturer Part#:

NPTB00004A

Price: $ 13.42
Product Category:

Discrete Semiconductor Products

Manufacturer: M/A-Com Technology Solutions
Short Description: HEMT N-CH 28V 5W DC-6GHZ 8SOIC
More Detail: RF Mosfet HEMT 28V 50mA 0Hz ~ 6GHz 14.8dB 4W 8-SOI...
DataSheet: NPTB00004A datasheetNPTB00004A Datasheet/PDF
Quantity: 728
1 +: $ 12.19680
10 +: $ 11.08800
25 +: $ 10.25640
100 +: $ 9.42480
250 +: $ 8.59320
500 +: $ 8.03880
Stock 728Can Ship Immediately
$ 13.42
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Transistor Type: HEMT
Frequency: 0Hz ~ 6GHz
Gain: 14.8dB
Voltage - Test: 28V
Current Rating: 1.4A
Noise Figure: --
Current - Test: 50mA
Power - Output: 4W
Voltage - Rated: 100V
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

NPTB00004A is a type of transistor known as a field effect transistor (FET). Specifically, it is a type of FET known as a metal oxide semiconductor field effect transistor (MOSFET). These transistors are known to be used in radio frequency (RF) applications.

FETs are transistors that are capable of amplifying or switching electronic signals, and they hold similar characteristics to both bipolar and unipolar transistors. For example, unlike bipolar transistors, FETs do not utilize a base current to control current flow. Instead, the current flow is controlled by an electric field. In addition, FETs are also similar to unipolar transistors because electrons are the only charge carriers in both types of transistors. However, FETs have a higher input impedance, a steep output curve, and better frequency response than unipolar transistors.

MOSFETs can be considered a further refinement of the basic FET design and are capable of serving as a switch or an amplifier, depending on the application. In addition, MOSFETs offer improved performance compared to their FET counterparts, such as higher input resistance and lower voltage thresholds. NPTB00004A also offers improved performance thanks to its increased power rating and higher operating temperature range.

When it comes to RF applications, MOSFETs are ideal because they are capable of operating over a wide range of frequencies. This is due to their low capacitance, which ensures that the transistor is not limited by frequency. NPTB00004A, in particular, is capable of operating at frequencies ranging from DC up to 4 GHZ. This makes the transistor well-suited for RF applications.

The working principle of a MOSFET is as follows: A voltage is applied to the transistor’s gate, which creates an electrostatic field between the source and the drain. This field forms a channel through which electrons can flow from the source to the drain. The width and resistance of the channel can be controlled by adjusting the voltage applied to the gate. This allows for the current to be regulated and for the MOSFET to operate as an analog or digital switch, depending on the application.

In summary, NPTB00004A is a type of MOSFET that is ideal for RF applications. It offers improved performance compared to its FET counterparts, with a higher power rating and a wide operating temperature range. Moreover, the transistor is capable of operating at frequencies ranging from DC up to 4 GHZ. Finally, the working principle of a MOSFET relies on the electrostatic field formed by the voltage applied to its gate, which allows for current regulation and the functioning of the transistor as an analog or digital switch.

The specific data is subject to PDF, and the above content is for reference

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