NRVB8H100MFSWFT1G

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A diode is a two-terminal electronic device that uses the rectifying properties of a semiconductor junction to allow the flow of current in one direction, while blocking the movement of current in the opposite direction. Rectifiers, meanwhile, are special diodes that are able to convert alternating current (AC) to direct current (DC). Single diodes are then commonly used in applications where full-wave or bridge rectification is not needed. The NRVB8H100MFSWFT1G is a single diode, designed for various applications.

The NRVB8H100MFSWFT1G is manufactured by On Semiconductor, and is a member of the company’s new HiperFETTM family of ultra-low RDS(on) devices. It has a 12A/600V rating, and utilizes a new and improved N-channel enhancement mode MOSFET design, which combines the advantages of high blocking voltage and low resistance. This makes the NRVB8H100MFSWFT1G an ideal choice for high power, low-loss rectification applications. It offers a reverse recovery time of 10.5ns and reverse avalanche current of 8A, ensuring excellent circuit performance.

The device is also equipped with built-in Electrostatic Discharge (ESD) protection, including ESD immunity of up to 8kV. Additionally, it features an isolation voltage of up to 1,000V, making it suitable for use in high-voltage isolation applications. The NRVB8H100MFSWFT1G has an operating temperature range of -55°C to +175°C, making it suitable for use in a variety of industrial and automotive applications. It is also RoHS-compliant and halogen free, making it environmentally friendly.

Now let’s take a look at the working principle of the NRVB8H100MFSWFT1G. The device consists of a P-type and an N-type silicon semiconductor material, with a junction between them. When a forward bias voltage is applied, the junction of the NRVB8H100MFSWFT1G will become conductive. This allows current to flow through the diode, in one direction. The current is then rectified, i.e. converted from alternating current (AC) to direct current (DC). When a reverse bias voltage is applied to the device, however, the junction of the device will become non-conductive, blocking current flow in the opposite direction.

As mentioned earlier, the NRVB8H100MFSWFT1G is suitable for use in high-voltage isolation applications. In this type of application, the NRVB8H100MFSWFT1G can be used to isolate the input and output of a device, providing galvanic isolation to protect against accidental contact. The device can be used in a variety of other applications as well, such as rectifying high voltage AC power supplies, DC-DC converters, LED lighting, motor drives, power supplies, welding power supplies, and more.

In summary, the NRVB8H100MFSWFT1G is a single diode designed for various high-voltage isolation and full-wave rectification applications. It has a 12A/600V rating, and features a new and improved N-channel enhancement mode MOSFET design. It offers a reverse recovery time of 10.5ns and reverse avalanche current of 8A, and is equipped with built-in Electrostatic Discharge (ESD) protection. The device is suitable for use in a variety of industrial and automotive applications. It is also RoHS-compliant and halogen free, making it environmentally friendly.

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