NRVBM120LT1G

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NRVBM120LT1G is a type of single rectifier diodes. It has a maximum current rating of 120 A and a peak power rating of 130 kW. It is a metal-oxide-semiconductor field-effect transistor (MOSFET) based rectifier diode, which makes it highly reliable and efficient. Its main application field is in power electronics, such as in motor drives, power conversion, power supply systems, and more.

The working principle of the NRVBM120LT1G single rectifier diode is based on the process of electron current flow. Electrons are driven from the positive terminal of the diode and creates a current towards the negative side, forming a forward current. This allows electrical power to flow from the positive side to the negative, converting alternating current (AC) to direct current (DC). The internal construction of the diode is designed to minimize losses and to provide an optimal voltage transfer.

The MOSFET rectification technology used in the NRVBM120LT1G makes this diode highly efficient and provides low resistance, allowing it to handle large amounts of power with minimal losses. This makes it suitable for use in various power conversion and power management systems, such as AC/DC converters, DC/DC converters, and inverters.

The NRVBM120LT1G features a reverse recovery time of 5.8 ns, and a turn-on time of 1.2 ns, making it capable of handling high-frequency switching applications with minimal losses and distortion. This diode is also capable of withstanding high operating temperatures, with a maximum temperature rating of 175 °C.

The NRVBM120LT1G single rectifier diode is suitable for many high-power applications, from motor drives and power converters to switched-mode power supplies, and more. With its reliable operation and efficient power performance, the NRVBM120LT1G is a great choice for many different power electronics applications.

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