Allicdata Part #: | NRVBA140T3GOSTR-ND |
Manufacturer Part#: |
NRVBA140T3G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE SCHOTTKY 40V 1A SMA |
More Detail: | Diode Schottky 40V 1A Surface Mount SMA |
DataSheet: | NRVBA140T3G Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 40V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 550mV @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 500µA @ 40V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AC, SMA |
Supplier Device Package: | SMA |
Operating Temperature - Junction: | -55°C ~ 125°C |
Base Part Number: | MBRA140 |
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The NRVBA140T3G is a single rectifier diode made by ON Semiconductor. It is designed to provide efficient, reliable rectification and lower power loss in DC to DC converters and other power supply systems. The NRVBA140T3G is available in the SOT-323 package and offers superior performance compared to traditional diodes, including higher forward currents, lower forward and reverse leakage current, and improved surge voltage performance.
The NRVBA140T3G diode has a variety of applications and can be used for general purpose rectification, freewheeling and reversing, low frequency switching, and as a low power constant current source. Additionally, it can be used in automotive, industrial, and telecommunications applications, where dependable and efficient rectification is needed. The device is capable of operating at temperatures ranging from -55°C to 150°C and has the low leakage current and fast recovery time needed for use in high frequency rectifier applications.
The working principle of the NRVBA140T3G diode is based on the PN junction diode. When the diode is forward biased, current can flow in only one direction through the device, and in reverse bias, it is designed to block current. This is done by the depletion region, which is created by the built-in voltage between the P-type and N-type materials that make up the junction. The depletion region gets thinner and wider as a voltage is applied and acts as an insulating barrier, blocking any current flow in the reverse bias direction.
The NRVBA140T3G diode is capable of carrying up to 1.2 amps of current at a maximum reverse voltage of 140V. It can also handle peak surge currents up to 5 amps with a recovery time of just 10 nanoseconds. Additionally, the device has low forward voltage drop and other key parameters, such as reverse recovery time, capacitance, and junction capacitance, which make it an ideal choice for a variety of rectification applications.
In summary, the NRVBA140T3G diode is a single rectifier diode designed for lighting, automotive, industrial, and telecommunications applications. It is designed to provide efficient and reliable rectification, with a maximum reverse voltage of 140V, forward current of up to 1.2 amps, and peak surge current of 5 amps. It also has a low forward voltage drop and fast recovery time, making it suitable for high frequency rectifiers. The diode\'s working principle is based on the PN junction diode, where a thin and wide depletion region is created by the built-in voltage between the P and N type materials, blocking current in reverse bias and allowing current to flow in the forward bias direction.
The specific data is subject to PDF, and the above content is for reference
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