Allicdata Part #: | NSF8DTHE3_A/P-ND |
Manufacturer Part#: |
NSF8DTHE3_A/P |
Price: | $ 0.46 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 200V 8A ITO220AC |
More Detail: | Diode Standard 200V 8A Through Hole ITO-220AC |
DataSheet: | NSF8DTHE3_A/P Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 0.41675 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200V |
Current - Average Rectified (Io): | 8A |
Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 8A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr: | 10µA @ 200V |
Capacitance @ Vr, F: | 55pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | TO-220-2 Insulated, TO-220AC |
Supplier Device Package: | ITO-220AC |
Operating Temperature - Junction: | -55°C ~ 150°C |
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NSF8DTHE3_A/P (A/P) is a rectifier diode that has wide applications by providing superior performance in semiconductor and microelectronic markets. The state-of-the-art device utilizes the latest advanced nanotechnology and employs a unique N-channel structure that improves efficiency and reduces power consumption when used in various rectification circuits.
A/P rectifier diodes are constructed with two main parts. The first part is the anode, which has a positive-charge terminal, while the second part is the cathode, which has a negative-charge terminal. When a current passes through the anode and cathode, the diodes allow electrical current to go in one direction, rectifying the current from AC to DC.
The A/P rectifier diode is designed for use in many applications, including automotive, industrial, medical, military, and communication systems. The device is also ideal for use in power amplifiers, power supplies, motor control circuits, and electronic instrumentation. Its outstanding features include low forward voltage drop and low junction capacitance. It also has an ultra-high surge capability, fast turn-on time, low reverse leakage current, and low thermal resistance.
The main working principle of NSF8DTHE3_A/P is to use the rectification effect of a p-n junction diode. When a voltage is applied, electrons are injected from the depletion layer of the p-type material into the n-type material, resulting in a rectified current flow. The diode rectifies the applied AC voltage to a DC voltage and can be used in various rectification circuits.
When the NSF8DTHE3_A/P is used in a rectification circuit, it offers superior performance and reduces power consumption. The device has an adjustable threshold voltage, which can be adjusted to match the application’s requirements. It also features an adjustable maximum reverse operating voltage, which helps in reducing power dissipation. The device also has an adjustable on-state voltage, effectively eliminating the effects of diode recovery time on the system’s power efficiency.
The NSF8DTHE3_A/P provides numerous benefits, such as fast turn-on time, low forward voltage drop, low junction capacitance, and low reverse leakage current. These features make it an ideal choice for various rectification applications. In addition, the device has an adjustable operating temperature range, which is suitable for different working environments. Finally, the device has a high break-down voltage and is capable of operating up to a high voltage range, making it suitable for various high-power applications.
In conclusion, NSF8DTHE3_A/P is a rectifier diode that has wide applications in various markets. The state-of-the-art device utilizes the latest advanced nanotechnology and employs a unique N-channel structure that improves efficiency and reduces power consumption when used in various rectification circuits. Its main working principle is to use the rectification effect of a p-n junction diode. The device has several features that make it the perfect choice for applications requiring rectification, such as automotive, industrial, medical, and military.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
NSF8BT-E3/45 | Vishay Semic... | 0.37 $ | 1000 | DIODE GEN PURP 100V 8A IT... |
NSF8DT-E3/45 | Vishay Semic... | 0.37 $ | 1000 | DIODE GEN PURP 200V 8A IT... |
NSF8GT-E3/45 | Vishay Semic... | 0.37 $ | 1000 | DIODE GEN PURP 400V 8A IT... |
NSF8JT-E3/45 | Vishay Semic... | 0.32 $ | 1000 | DIODE GEN PURP 600V 8A IT... |
NSF8KT-E3/45 | Vishay Semic... | 0.32 $ | 1000 | DIODE GEN PURP 800V 8A IT... |
NSF8MT-E3/45 | Vishay Semic... | 0.32 $ | 1000 | DIODE GEN PURP 1KV 8A ITO... |
NSF8BTHE3_A/P | Vishay Semic... | 0.46 $ | 1000 | DIODE GEN PURP 100V 8A IT... |
NSF8DTHE3_A/P | Vishay Semic... | 0.46 $ | 1000 | DIODE GEN PURP 200V 8A IT... |
NSF8GTHE3_A/P | Vishay Semic... | 0.53 $ | 1000 | DIODE GEN PURP 400V 8A IT... |
NSF8JTHE3_A/P | Vishay Semic... | 0.46 $ | 1000 | DIODE GEN PURP 600V 8A IT... |
NSF8KTHE3_A/P | Vishay Semic... | 0.53 $ | 1000 | DIODE GEN PURP 800V 8A IT... |
NSF8MTHE3_A/P | Vishay Semic... | 0.46 $ | 1000 | DIODE GEN PURP 1KV 8A ITO... |
NSF8BTHE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 8A IT... |
NSF8DTHE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 8A IT... |
NSF8GTHE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 8A IT... |
NSF8JTHE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 8A IT... |
NSF8KTHE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 800V 8A IT... |
NSF8MTHE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 1KV 8A ITO... |
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