Allicdata Part #: | NSF8GT-E3/45-ND |
Manufacturer Part#: |
NSF8GT-E3/45 |
Price: | $ 0.37 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 400V 8A ITO220AC |
More Detail: | Diode Standard 400V 8A Through Hole ITO-220AC |
DataSheet: | NSF8GT-E3/45 Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 0.33490 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 400V |
Current - Average Rectified (Io): | 8A |
Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 8A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr: | 10µA @ 400V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Through Hole |
Package / Case: | TO-220-2 Full Pack, Isolated Tab |
Supplier Device Package: | ITO-220AC |
Operating Temperature - Junction: | -55°C ~ 150°C |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
A NSF8GT-E3/45 diode is one of the most popular rectifying devices in the electronics field today. It is used in a variety of applications, including consumer electronics, medical equipment, security systems, communications, semiconductor manufacturing, and lighting. The NSF8GT-E3/45 diode is a single-ended semiconductor diode, meaning it is able to current pass in only one direction. The device is small and convenient, making it ideal for use in many different types of applications.
The NSF8GT-E3/45 diode is a high-performance rectifier based on silicon carbide technology. It has a maximum operating temperature of 185°C, which makes it ideal for high-temperature applications. The device also has an excellent avalanche rating, meaning it is highly resistant to shock and vibration, making it suitable for use in hazardous environments. The diode also has a fast switching time, allowing it to quickly switch between on and off states with no delay.
The NSF8GT-E3/45 application field and working principle is primarily used in applications of electronic circuit protection and power supply, such as automotive and industrial power supplies, electro-mechanical systems, and even aerospace applications. Generally, the device provides a rectifying solution to AC/DC conversion and polarity control. In its most basic form, this diode will direct alternating currents (AC) in a single direction, essentially turning it into a direct current (DC).
The device can also be used to control the polarity of signals by limiting the current flow to a single direction. This helps eliminate the possibility of short circuits, which can cause catastrophic damage to devices like computers and other digital devices. Additionally, the device can also be used to provide protection against electrostatic discharge (ESD). This is especially important in medical fields as it prevents electric shocks and other related safety hazards.
The NSF8GT-E3/45 device works on the principle of P-N junction. Here, the device is made up of two distinct semiconductor layers - a p-type layer (made of positive ions) and a n-type layer (made of negative ions). Together, these two layers act as a diode, allowing electric current to pass only in one direction. The two layers are separated by a thin layer of an insulating material, which is also known as a depletion layer. This layer allows the diode to act as a switch, controlling the current flow in the circuit.
The main advantages of using the NSF8GT-E3/45 device include its high efficiency and fast switching times. Its great performance in both AC/DC conversions and polarity control makes it the ideal choice for many applications. Also, the device is small and light, making it easy to install in any type of application. In addition, the device has excellent high-temperature and shock and vibration resistance, making it suitable for use in hazardous environments.
The specific data is subject to PDF, and the above content is for referencePart Number | Manufacturer | Price | Quantity | Description |
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NSF8BT-E3/45 | Vishay Semic... | 0.37 $ | 1000 | DIODE GEN PURP 100V 8A IT... |
NSF8DT-E3/45 | Vishay Semic... | 0.37 $ | 1000 | DIODE GEN PURP 200V 8A IT... |
NSF8GT-E3/45 | Vishay Semic... | 0.37 $ | 1000 | DIODE GEN PURP 400V 8A IT... |
NSF8JT-E3/45 | Vishay Semic... | 0.32 $ | 1000 | DIODE GEN PURP 600V 8A IT... |
NSF8KT-E3/45 | Vishay Semic... | 0.32 $ | 1000 | DIODE GEN PURP 800V 8A IT... |
NSF8MT-E3/45 | Vishay Semic... | 0.32 $ | 1000 | DIODE GEN PURP 1KV 8A ITO... |
NSF8BTHE3_A/P | Vishay Semic... | 0.46 $ | 1000 | DIODE GEN PURP 100V 8A IT... |
NSF8DTHE3_A/P | Vishay Semic... | 0.46 $ | 1000 | DIODE GEN PURP 200V 8A IT... |
NSF8GTHE3_A/P | Vishay Semic... | 0.53 $ | 1000 | DIODE GEN PURP 400V 8A IT... |
NSF8JTHE3_A/P | Vishay Semic... | 0.46 $ | 1000 | DIODE GEN PURP 600V 8A IT... |
NSF8KTHE3_A/P | Vishay Semic... | 0.53 $ | 1000 | DIODE GEN PURP 800V 8A IT... |
NSF8MTHE3_A/P | Vishay Semic... | 0.46 $ | 1000 | DIODE GEN PURP 1KV 8A ITO... |
NSF8BTHE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 8A IT... |
NSF8DTHE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 8A IT... |
NSF8GTHE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 8A IT... |
NSF8JTHE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 8A IT... |
NSF8KTHE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 800V 8A IT... |
NSF8MTHE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 1KV 8A ITO... |
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