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NSF8KTHE3_A/P Application Field and Working Principle

The NSF8KTHE3_A/P is a single-phase, Shottky barrier rectifier with a maximum dynamic forward current of 8.0 A. It is designed to be used in low-power switching power supply, frequency conversion and other circuits where a low voltage drop rectification is preferred. The NSF8KTHE3_A/P is an ideal diode for use in applications where there is a need for a high current, high efficiency rectification device.

Operation Principles

The NSF8KTHE3_A/P uses a Schottky barrier to enable a lower voltage drop when conducting current, in comparison to standard Silicon based diodes. This is due to an inherent forward voltage drop of only around 0.4V instead of 0.7V for standard diodes. Furthermore, the NSF8KTHE3_A/P features a low reverse leakage current and fast switching times. As the diode is forward biased, it will conduct current from its Anode to the Cathode.

Specifications of NSF8KTHE3_A/P

The NSF8KTHE3_A/P has a maximum forward current rating of 8.0 Amps. The maximum junction temperature is set at 150°C and the forward voltage drop is only 0.4V. The maximum reverse voltage is ±20V and the reverse leakage current is typically 130μA. The diode has a maximum forward capacitance of 14.2 pF and a maximum reverse recovery time of 11.8ns.

Applications

The NSF8KTHE3_A/P is a great rectifier for applications requiring low voltage drops, high current and improved efficiency. Some typical application fields for this device include low-power switching power supplies, frequency converters and general high current rectification. It is also widely used in aerospace and medical equipment.

Conclusion

The NSF8KTHE3_A/P is a single-phase, Shottky barrier rectifier and is widely used in many applications requiring improved efficiency over standard rectifiers. It has a maximum dynamic forward current of 8.0 A and a low forward voltage drop of 0.4V. It is typically used in low-power switching power supplies, frequency converters, aerospace and medical equipment.

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