NSS30101LT1G Discrete Semiconductor Products |
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Allicdata Part #: | NSS30101LT1GOSTR-ND |
Manufacturer Part#: |
NSS30101LT1G |
Price: | $ 0.08 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 30V 1A SOT-23 |
More Detail: | Bipolar (BJT) Transistor NPN 30V 1A 100MHz 310mW S... |
DataSheet: | NSS30101LT1G Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.07782 |
6000 +: | $ 0.07311 |
15000 +: | $ 0.06839 |
30000 +: | $ 0.06289 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 30V |
Vce Saturation (Max) @ Ib, Ic: | 200mV @ 100mA, 1A |
Current - Collector Cutoff (Max): | 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 300 @ 500mA, 5V |
Power - Max: | 310mW |
Frequency - Transition: | 100MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 (TO-236) |
Base Part Number: | NSS30101 |
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The NSS30101LT1G is a NPN transistor with a low growth rate silicon layer and comprises of a monolithic epitaxial structure. It is manufactured by a company that is well-known for its quality and reliability. This product is designed to function as a power switch and is used in many applications such as audio amplifiers, RFID switches, and switch-mode power supplies (SMPS).
Application Field
The NSS30101LT1G is primarily used as a power switch in the telecommunications, automotive, consumer electronics and automated test and measurement industries. It has been extensively used to manage the power distribution of consumer electronics, such as TVs, audio amplifiers, and laptop computers. This product is also used in radio frequency identification (RFID) switch applications to control the opening and closing of contactless functional. Moreover, this transistor can be utilized in DC to DC switch mode power supplies to support high speeds and varying loads. Lastly, it is used in power and motor drive circuits, as well as automotive and aerospace instrumentation equipment.
Working Principle
The NSS30101LT1G is an NPN silicon transistor that utilizes a low growth rate epitaxial structure. The product has an integrated collector-emitter voltage, collector voltage, and base current limit. This product helps prevent destruction during operation due to an overload or an excessively large instantaneous power. The NBS30101LT1G features an ON/OFF function via an open or closed transistor gate. During the ON state, there is an in-built current carrying capacity that is determined by the size of the collector-base junction capacitance. The OFF state is activated by the charge stored by the reverse biased collector-base junction.
In summary, the NSS30101LT1G is a reliable NPN transistor with a low growth rate epitaxial structure that is used for switching applications. It is used mainly in the telecommunications, automotive, consumer electronics and automated test and measurement industries. It has an integrated current capacity and a collector-base junction capacitance that helps prevent destruction during operation due to an overload. The NSS30101LT1G has an ON/OFF function, which enables it to switch between the ON and OFF states.
The specific data is subject to PDF, and the above content is for reference
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