NSS30201MR6T1G Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	NPN
Current - Collector (Ic) (Max):	2A
Voltage - Collector Emitter Breakdown (Max):	30V
Vce Saturation (Max) @ Ib, Ic:	75mV @ 1mA, 100mA
Current - Collector Cutoff (Max):	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	300 @ 500mA, 5V
Power - Max:	535mW
Frequency - Transition:	300MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SOT-23-6
Supplier Device Package:	6-TSOP
Base Part Number:	NSS30201

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Introduction

NSS30201MR6T1G is a general-purpose NPN-bipolar transistor. It is often used in a wide range of applications including digital, power, switching, and analog circuits. This type of transistor is designed to be high-performance, reliable and efficient.

Application Field

NSS30201MR6T1G is primarily used in applications where a higher current gain is required compared to the usual silicon NPN transistor. It can be used in digital, power, switching and analog circuits where a low-cost, low-power and reliable solution is needed. The fast switching characteristics of the transistor make it well suited for use in applications such as switching high-current loads, power supply regulation, and voltage and current sensing. The low DC current gain of the transistors ensures low power consumption for most applications. The low noise levels provided by the NSS30201MR6T1G ensure reliable operation when the device is used in sensitive applications.

Working Principle

The NSS30201MR6T1G transistor is based on the principle of the bipolar junction transistor (BJT). The transistor has three terminals, the base, collector and emitter, each of which are connected to a lead frame bond wire. The BJT operation is based on the difference in electric potential between the base and emitter region, which generates a current, or ‘base current’. The current then passes through the two junctions formed between the base and collector and between the base and emitter, resulting in an amplified current between the collector and emitter, known as the collector current. The current gain of the transistor is determined by the ratio of the collector current to the base current. The current gain of the NSS30201MR6T1G is typically between 40 and 500.

Conclusion

In conclusion, the NSS30201MR6T1G is a general-purpose NPN-bipolar transistor designed for use in a wide variety of applications where a high current gain is required. The transistor is used in digital, power, switching and analog circuits and its low DC current gain ensures low power consumption. In addition, its fast switching characteristics make it well suited for use in applications such as switching high-current loads, power supply regulation, and voltage and current sensing. The NSS30201MR6T1G works on the principle of the bipolar junction transistor and provides a current gain of typically between 40 and 500.

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