NSS60201LT1G Discrete Semiconductor Products |
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Allicdata Part #: | NSS60201LT1GOSTR-ND |
Manufacturer Part#: |
NSS60201LT1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 60V 2A SOT-23 |
More Detail: | Bipolar (BJT) Transistor NPN 60V 2A 100MHz 460mW S... |
DataSheet: | NSS60201LT1G Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 2A |
Voltage - Collector Emitter Breakdown (Max): | 60V |
Vce Saturation (Max) @ Ib, Ic: | 140mV @ 200mA, 2A |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 150 @ 1A, 2V |
Power - Max: | 460mW |
Frequency - Transition: | 100MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 (TO-236) |
Base Part Number: | NSS60201 |
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NSS60201LT1G is a small signal NPN transistor designed for high frequency low noise amplification. As a single bipolar junction transistor (BJT), it is able to deliver high current in a wide range of applications. Therefore, it is excellent for low noise amplification, switching and other applications. It has high current gain from 50 to 100 and a very low noise figure of 0.1 or lower.
NSS60201LT1G is used for many high-frequency applications such as low noise amplifiers, low noise oscillators and converters. Its low noise figure, high current gain and wide output signal range make it suitable for these kinds of applications. It is also used in wireless communication and signal processing systems.
A transistor consists of three diodes connected in series and arranged such that one junction is shared by two diodes while the other junction is shared by the remaining diodes. The NSS60201LT1G is basically a three-layer silicon device and an NPN transistor has the emitter, collector and base leads. In the NPN configuration, the emitter is negatively charged or "n" type whereas the collector and base are positively charged or "p" type.
The working principle of NSS60201LT1G is based on the operation of N-type and P-type semiconductors. When a positive voltage is applied to the base, it causes a current to flow between the base and the collector. This current flow between the base and the collector causes electrons to move from the collector to the base of the transistor, thus allowing current to flow from the emitter to the collector. This is known as forward biasing and is the most common mode of operation.
Forward biasing also causes the transistor to amplify the input signal and also limits the amount of current that can flow through it. This technique is used to amplify signals in radio, television and other electronic devices. When the voltage is reduced or reversed, the transistor is in reverse biasing and no current flows. This is used in switching applications.
NSS60201LT1G is used in a wide range of applications in various industries. Its high current gain, low noise figure and wide output signal range make it suitable for low noise amplifiers, low noise oscillators, converters and other high-frequency applications. It is also used in wireless communication and signal processing systems. Its versatility and high performance make it one of the most popular transistors for many applications.
The specific data is subject to PDF, and the above content is for reference
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