Allicdata Part #: | NSS60601MZ4T3GOSTR-ND |
Manufacturer Part#: |
NSS60601MZ4T3G |
Price: | $ 0.14 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 60V 6A SOT-223 |
More Detail: | Bipolar (BJT) Transistor NPN 60V 6A 100MHz 800mW S... |
DataSheet: | NSS60601MZ4T3G Datasheet/PDF |
Quantity: | 1000 |
4000 +: | $ 0.12499 |
8000 +: | $ 0.11692 |
12000 +: | $ 0.10886 |
28000 +: | $ 0.10752 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 6A |
Voltage - Collector Emitter Breakdown (Max): | 60V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 600mA, 6A |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 1A, 2V |
Power - Max: | 800mW |
Frequency - Transition: | 100MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | SOT-223 |
Base Part Number: | NSS60601 |
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The NSS60601MZ4T3G is a type of single bipolar junction transistor (BJT), commonly used in many fields.The NSS60601MZ4T3G is used as an amplifier, a switch, a logical inverter, an oscillator and other applications. It is also used to amplify radio waves in the radio frequency (RF) range.
Structure of the NSS60601MZ4T3G
The NSS60601MZ4T3G is made up of two PN junctions and three layers of semiconductor material. It contains an emitter, a base and a collector. The base layer is typically made of silicon or germanium which is relatively thin. The emitter is located near the base layer and the collector is located near the other end of the base.
Working Principle of the NSS60601MZ4T3G
As voltage is applied across the three layers of semiconductor, electrons start to flow. The electrons enter the emitter through the base and a current is established between the emitter and the collector. This current flow is referred to as the transistor\'s collector current and is the main function of the transistor.
The emitter and the base form a diode. When voltage is applied to the base-emitter, current begins to flow creating the base current. This base current controls the collector current, providing an amplification effect. When voltage is applied, the base current increases and the collector current also increases proportionally. This allows for a larger collector current than the base current without needing a large input signal.
Applications of the NSS60601MZ4T3G
The NSS60601MZ4T3G transistor has a number of uses in many different areas. First, it can be used as an amplifier in audio applications, providing an amplified signal from a small audio signal. It can also be used as an oscillator, providing a signal at a particular frequency.
The NSS60601MZ4T3G is also often used in RF applications, such as radio transmitters. By controlling the base current, the transistor can amplify signals within a range of frequencies, allowing radio signals to be transmitted.
The NSS60601MZ4T3G is also used in logic circuits, such as a NOT gate. The base current can be controlled to form two logical states, creating the basis of digital logic.
Finally, the NSS60601MZ4T3G is also used as a switch. By controlling the base current, the transistor can act as an on/off switch, allowing or blocking the flow of current.
Conclusion
The NSS60601MZ4T3G is a type of single bipolar junction transistor, commonly used in many fields. Its structure consists of two PN junctions and three layers of semiconductor material. Its working principle is based on controlling the base current which will affect the collector current, allowing for amplification, oscillation, logic circuits and switching applications.
The specific data is subject to PDF, and the above content is for reference
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