NSS60600MZ4T1G Discrete Semiconductor Products |
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Allicdata Part #: | NSS60600MZ4T1GOSTR-ND |
Manufacturer Part#: |
NSS60600MZ4T1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 60V 6A SOT-223 |
More Detail: | Bipolar (BJT) Transistor PNP 60V 6A 100MHz 800mW S... |
DataSheet: | NSS60600MZ4T1G Datasheet/PDF |
Quantity: | 7000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 6A |
Voltage - Collector Emitter Breakdown (Max): | 60V |
Vce Saturation (Max) @ Ib, Ic: | 350mV @ 600mA, 6A |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 1A, 2V |
Power - Max: | 800mW |
Frequency - Transition: | 100MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | SOT-223 |
Base Part Number: | NSS60600 |
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The NSS60600MZ4T1G is a high-performance, high-reliability, integrated power amplifier individually created to meet the current demand of industrial and commercial markets. The device is a Class A bipolar junction transistor (BJT) single cell amplifier that amplifies signals in both directions (push-pull). It is designed to provide different power levels with superior performance in audio, video and wireless communications systems.
The device is manufactured using highly advanced semiconductor fabrication processes to ensure its high performance and reliability. It also incorporates several built-in protection features to protect against overloads and excessive heat. It is also designed to be used in high voltage and high frequency applications.
The NSS60600MZ4T1G is designed to operate at different operating frequencies and power levels, allowing it to adapt to different applications and requirements. It can amplify signals from 400 kHz to 3 GHz, while delivering up to 5 Watts. The device also features an input match range of up to 50:1, a power gain of up to 20 dB, and a noise figure of up to 6 dB.
The NSS60600MZ4T1G is intended to be used in applications such as base stations, radio links and reception systems, power amplifiers, instrumentation and control systems, automotive applications, and audio-video applications. It is also used in medical and laboratory equipment where precision and reliability is required.
The working principle of the NSS60600MZ4T1G is simple. It amplifies signals by way of a two-port amplifier, which is made up of two NPN BJT transistors. The transistors are connected in such a way that an alternating current (AC) signal, called the input signal, is applied to one of the transistors and amplified by the other. The output of a two-port amplifier is related to the input, and can be R = Vout/Vin. This is the voltage gain of an amplifier.
The NSS60600MZ4T1G operates at high voltages and frequencies, providing high efficiency and maximum power transfer. It is also highly reliable, and has built-in protection features to prevent overheating and overloading. The device is also designed to be used in applications which require superior performance, such as automotive and medical applications. This makes the NSS60600MZ4T1G an ideal choice for industrial and commercial applications.
The specific data is subject to PDF, and the above content is for reference
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