NST847BDP6T5G Allicdata Electronics
Allicdata Part #:

NST847BDP6T5GOSTR-ND

Manufacturer Part#:

NST847BDP6T5G

Price: $ 0.05
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS 2NPN 45V 0.1A SOT963
More Detail: Bipolar (BJT) Transistor Array 2 NPN (Dual) 45V 10...
DataSheet: NST847BDP6T5G datasheetNST847BDP6T5G Datasheet/PDF
Quantity: 1000
8000 +: $ 0.04108
16000 +: $ 0.03651
24000 +: $ 0.03423
56000 +: $ 0.03043
Stock 1000Can Ship Immediately
$ 0.05
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 350mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-963
Supplier Device Package: SOT-963
Description

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The NST847BDP6T5G is a bipolar junction transistor (BJT) array manufactured by On Semiconductor. It is a small package type with six NPN transistors and a darlington transistor pair, in a powerdip package. This package type is designed to be used in low-power electronic applications where heat dissipation is a concern. As a result, this device is ideal for use in applications such as portable electronic devices, automotive electronics, white goods and others.

The NST847BDP6T5G features a structure combining NPN transistors and Darlington transistors. Each transistor has an independent base, collector and emitter. The array presents a high gain per transistor, allowing for efficient operation of low-power devices. It also offers good collector-emitter saturation voltage and good power dissipation capability, which is useful for applications where low-power consumption is required. It can be used as a direct replacement for a single transistor, or as an array of transistors with high current gain and noise suppression.

The NST847BDP6T5G works using the principle of BJT operation. When turned on, the voltage applied to the base is converted into a current. This current then passes through the collector-emitter junction, and when it is high enough, a current is induced to flow through the emitter-collector junction. As a result, the current transferred through the collector-emitter junction is greater than the current that was originally supplied to the base. This current gain is referred to as the "hFE" or current gain factor.

The NST847BDP6T5G is commonly used in applications where the current needs to be switched or amplified, such as for audio applications or motor control. It can also be used for sensing and switching in low-power applications, as well as for temperature, pressure and other types of sensing. A wide variety of applications where the device is useful can be found in medical, automotive, telecommunication and consumer electronics.

In summary, the NST847BDP6T5G is a bipolar junction transistor array suitable for use in low-power electronic applications where heat dissipation is a concern. It features a structure combining NPN transistors and darlington transistors, and offers high current gain and noise suppression. Common applications include audio, motor control, sensing and switching, as well as temperature and pressure sensing. It is an effective solution for applications requiring high performance in a small package size.

The specific data is subject to PDF, and the above content is for reference

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