NST847BF3T5G

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	NPN
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	45V
Vce Saturation (Max) @ Ib, Ic:	600mV @ 5mA, 100mA
Current - Collector Cutoff (Max):	15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	200 @ 2mA, 5V
Power - Max:	290mW
Frequency - Transition:	100MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SOT-1123
Supplier Device Package:	SOT-1123
Base Part Number:	NST847B

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NST847BF3T5G is a single bipolar junction transistor (BJT) and is suitable for wide range of applications. This device is capable of operating in both the high and low current ranges, making it suitable for a variety of applications. In this article, we will discuss the application field and working principle of the NST847BF3T5G single bipolar junction transistor.First, let us discuss the application field of the NST847BF3T5G. This single bipolar junction transistor is suitable for a variety of applications, such as low-noise audio amplifiers and switching circuits. Additionally, due to its wide current range, it can be used in a variety of analog circuits, such as linear circuits, drive circuits and power drivers. In addition, the device is suitable for use in DC/DC or AC/DC converter circuits in computing systems and communication equipment, as well as output stages of modulated waveforms for transmitting purposes.Now, let us consider the working principle of the NST847BF3T5G device. First, the device works by reverse-biasing a p-n junction. This junction, when reverse biased, produces a depletion region between the n-type and p-type semiconductors. This depletion region, due to its lack of charge carriers, creates an electric potential barrier that increases the resistance between the two regions. As a result of this increased resistance, larger amounts of power are required for current to flow through the junction.Due to its three-layer construction, the device also acts as a current amplifier. This amplification occurs due to the fact that, when the device is forward biased, electrons are injected into the base region of the device, thus allowing the device to amplify a small input signal into a larger output signal. Additionally, this amplification also works in reverse, allowing the device to act as a small-signal amplifier.The NST847BF3T5G device also features a high output impedance and low input impedance. This combination allows the device to act as a power amplifier, allowing it to efficiently convert a low-power, high-voltage input signal into a high-power, low-voltage output signal.In summary, the NST847BF3T5G is a single bipolar junction transistor (BJT). It is suitable for a variety of applications, such as low-noise audio amplifiers and switching circuits. Additionally, due to its wide current range, it can be used in a variety of analog circuits, such as linear circuits, drive circuits and power drivers. Furthermore, the device also has a high output impedance and low input impedance, allowing it to act as a power amplifier.

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