NST857BF3T5G

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	PNP
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	45V
Vce Saturation (Max) @ Ib, Ic:	700mV @ 5mA, 100mA
Current - Collector Cutoff (Max):	15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	220 @ 2mA, 5V
Power - Max:	290mW
Frequency - Transition:	100MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SOT-1123
Supplier Device Package:	SOT-1123

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Introduction

The NST857BF3T5G transistor is a single bipolar junction transistor (BJT) that can be used in a variety of application fields. It is a NPN type transistor and is capable of handling a peak current of 450mA at a break down voltage of 85V. It is constructed on an 8 pin package and has good linearity, making it a popular choice for many electronic applications. In this article, we will discuss the application fields and working principles of the NST857BF3T5G transistor.

Application Fields

The NST857BF3T5G transistor can be used in a wide range of applications. It can be used in the output stages of audio amplifiers, as it provides excellent linearity even at very high frequencies. It can also be used in power supplies, as its high current handling capability makes it a great choice for low noise power supplies. The NST857BF3T5G transistor is also used in radio frequency (RF) amplifiers, power amplifiers, and other radio applications.

Working Principle

The NST857BF3T5G transistor has two terminals, the base and the collector. When an external voltage is applied to the base of the transistor, it causes a current flow to the collector, ejecting electrons from the base region of the transistor. This current induces an oppositely charged electric field, which in turn drives the ejected electrons from the base region to the collector. This process is called avalanche breakdown and it is the working principle of the transistor.The current flowing through the collector is proportional to the current flowing through the base. This is known as the collector current gain, and it is one of the important characteristics of the NST857BF3T5G transistor. The collector current gain is usually denoted by alpha (α) and is the ratio of the collector current to the base current.

Conclusion

The NST857BF3T5G transistor is a single bipolar junction transistor that can be used in a variety of application fields. It has a maximum peak current of 450mA and is constructed on an 8 pin package. Its good linearity makes it a popular choice for many electronic circuits. The main application fields are audio amplifiers, power supplies, RF amplifiers, and other radio applications. The working principle of the NST857BF3T5G transistor is based on avalanche breakdown. And the current gain of the transistor is denoted by alpha (α).

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