
Allicdata Part #: | NSTB1002DXV5T1G-ND |
Manufacturer Part#: |
NSTB1002DXV5T1G |
Price: | $ 0.09 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN PREBIAS/PNP 0.5W SOT55 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Bias... |
DataSheet: | ![]() |
Quantity: | 1000 |
4000 +: | $ 0.08404 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 1 NPN Pre-Biased, 1 PNP |
Current - Collector (Ic) (Max): | 100mA, 200mA |
Voltage - Collector Emitter Breakdown (Max): | 50V, 40V |
Resistor - Base (R1): | 47 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V / 100 @ 1mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA / 400mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 250MHz |
Power - Max: | 500mW |
Mounting Type: | Surface Mount |
Package / Case: | SOT-553 |
Supplier Device Package: | SOT-553 |
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NSTB1002DXV5T1G is an array of pre-biased bipolar transistors (BJT) which are used in a number of areas. This product has a wide range of functions, such as providing semiconductor-based devices with power supply and achieving low power consumption. It is often used in power electronics where it is important to enable low-power operation of the device.
This device is fabricated using the Silicon on Insulator (SOI) technology with a large floating gate structure. This offers exceptional performance and low noise levels with minimal leakage and threshold voltage requirements. In addition, it is a cost effective solution due to its low package size and low power consumption.
The NSTB1002DXV5T1G also features over-voltage protection. This is done by limiting the gate-source voltage to a predetermined safe limit. By doing this, it protects the transistor from voltage related overshots that may damage it. This is an important feature in power electronics where the voltages can be quite high and the circuit needs to be protected.
One of the main applications of the NSTB1002DXV5T1G lies in industrial control and automation. This devices is often used in high-power switching applications that require precise voltage regulation. It is also used in solenoid control as it allows for precise and instant switching. This can also be used in other applications such as current monitors, audio amplifiers and even semiconductor lasers.
The working principle of the NSTB1002DXV5T1G is to use an integrated circuit to switch an input signal into an output signal. It does this by using a pre-biased transistor array. This array is arranged into two separate branches and each branch contains one or more transistors. The transistors in each branch are connected by way of resistors and capacitors. When an input signal is given to the IC, each transistor in the array is switched to either a high or low state. This signal is then amplified and used to control the output.
In conclusion, the NSTB1002DXV5T1G is a pre-biased bipolar transistor array that is used in a number of areas. It is mainly used in industrial control and automation, as well as solenoid control. This device enables precise and instant switching, as well as offering over-voltage protection. The working principle of the device is to use an integrated circuit to switch an input signal into an output one.
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