Allicdata Part #: | NSTB60BDW1T1OS-ND |
Manufacturer Part#: |
NSTB60BDW1T1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN PREBIAS/PNP SOT363 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Bias... |
DataSheet: | NSTB60BDW1T1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V / 120 @ 5mA, 10V |
Base Part Number: | NSTB60B |
Supplier Device Package: | SC-88/SC70-6/SOT-363 |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Mounting Type: | Surface Mount |
Power - Max: | 250mW |
Frequency - Transition: | 140MHz |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 5mA, 10mA / 500mV @ 5mA, 50mA |
Series: | -- |
Resistor - Emitter Base (R2): | 47 kOhms |
Resistor - Base (R1): | 22 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 150mA |
Transistor Type: | 1 NPN Pre-Biased, 1 PNP |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The NSTB60BDW1T1 is a great example of an innovative device in the arena of transistor arrays. It is an NPN Silicon Darlington pre-biased device developed by the Toshiba Corporation.
This device features an integrated base current source, a temperature stable power device, and a temperature compensated gain. Among the benefits of using transistor arrays are the increased number of transistors on the same silicon die, increased packaging density, power savings, and better thermal characteristics. The NSTB60BDW1T1 is a great example of this technology.
The working principle behind this pre-biased transistor array is quite simple; the NSTB60BDW1T1 has a built-in base current source which is regulated to hold the regulatory current to a constant level. By using this regulated current flow, the device can be used to amplify and control signals from a wide range of applications. This device is also beneficial in environments with noisy or unstable conditions, where maintaining a constant voltage can be difficult.
In terms of practical applications, the NSTB60BDW1T1 is able to operate in a variety of fields, including audio, Marine, Automotive, Security and Industrial applications. It\'s temperature stable feature makes it ideal for controlling signals in high temperature and vibration conditions. Additionally, the integrated base current source helps ensure that the device holds a constant voltage even in harsh conditions or when exposed to electromagnetic interference.
The NSTB60BDW1T1 is also becoming increasingly popular in audio applications, due to its ability to amplify signals with minimum distortion. With its integrated emitter current limiting control, the NSTB60BDW1T1 is able to provide high gain and stability, which makes it an ideal choice for audio amplifiers. Additionally, the device\'s temperature stable power dissipation makes it perfectly suited for applications in high temperature environments.
The NSTB60BDW1T1 is also an invaluable asset when it comes to security applications. With its temperature stable characteristics and robust construction, it can be used for a variety of control tasks, such as detecting metal objects or sensing changes in pressure. Additionally, its integrated current source makes it ideal for use in mobile devices that require a stable voltage supply.
In conclusion, the NSTB60BDW1T1 is a great example of pre-biased transistor array technology and its many applications in a variety of fields. From its temperature stabilized power dissipation, to its ability to amplify signals with minimum distortion, the NSTB60BDW1T1 is an invaluable asset for a variety of industries. All of these features come together to make the NSTB60BDW1T1 an ideal choice for any projects that require a reliable and efficient transistor.
The specific data is subject to PDF, and the above content is for reference
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