NSV20101JT1G

I. IntroductionNSV20101JT1G is a Single Bipolar Junction Transistor (BJT) designed for voltage and current amplification or switching applications. As a BJT, it functions as a three-terminal semiconductor device that controls the flow of current between two terminals, the collector and the emitter, by the flow of current through a third terminal, the base. By controlling the base current, the collector to emitter current flow can be controlled accurately over a wide range of voltages and currents, making it ideal for various applications. II. FeaturesNSV20101JT1G is an NPN type BJT with a voltage rating of 400 V and a current rating of 3.2 A. It can be used at temperatures between -65 and +150 °C, and is rated for operation at collector to emitter voltages of 30 V and emitter to base voltages of 7 V. The package size is a SOT-236 with a height of 0.855 inches and pin diameters of 0.1 inches. Additionally, it has a max power consumption of 500 mW. III. ApplicationsNSV20101JT1G is designed for a wide range of applications, including voltage and current amplification or switching. Some applications include:• General purpose and low-frequency amplification and switching• High-speed switching in digital circuits• Low-noise amplification and switching• Voltage and current amplification for transducers• Low-level signal conditioning• Low-power control and instrumentation• Voltage and current switching in Pulse Width Modulators (PWMs)IV. Working PrincipleThe key feature of a BJT is its input base to output collector and emitter structure. By controlling the base current, the collector and emitter current flows can be controlled accurately, allowing the device to amplify current or switch current flow. This transistor has a particular working principle in which the base current and collector to emitter voltage are related by a gain, or hFE, which indicates how much the current gain is. A higher value of hFE indicates a larger current amplification, while the actual current gain, or β, is the ratio of the collector current and base current. In the case of the NSV20101JT1G, the values are: hFE = 130 - 170 and β = 50 - 75.V. ConclusionNSV20101JT1G is a Single Bipolar Junction Transistor (BJT) designed for voltage and current amplification or switching applications. It has a voltage rating of 400 V and a current rating of 3.2 A, can be used at temperatures between -65 and +150 °C, and is rated for operation at collector to emitter voltages of 30 V and emitter to base voltages of 7 V. It can be used in a variety of applications, including general purpose and low-frequency amplification and switching, high-speed switching in digital circuits, low-noise amplification and switching, and voltage and current amplification for transducers. Its working principle is based on the base current control of collector and emitter current flows, with a hFE of 130 - 170 and a β of 50 - 75.

NSV20201LT1G	ON Semicondu...	0.13 $	3000	TRANS NPN 20V 2A SOT-23-3...
NSV2029M3T5G	ON Semicondu...	0.04 $	1000	TRANS PNP 50V 0.15A SOT72...
NSV2SA2029M3T5G	ON Semicondu...	0.04 $	1000	TRANS PNP 50V 0.1A SOT723...
NSV2SC5658M3T5G	ON Semicondu...	0.04 $	1000	TRANS NPN 50V 0.15A SOT72...
NSV20101JT1G	ON Semicondu...	0.46 $	1000	TRANS NPN 20V 1A 89SC3Bip...
NSV20200LT1G	ON Semicondu...	0.13 $	3000	TRANS PNP 20V 2A SOT-23Bi...