NSV20200LT1G Allicdata Electronics

NSV20200LT1G Discrete Semiconductor Products

Allicdata Part #:

NSV20200LT1GOSTR-ND

Manufacturer Part#:

NSV20200LT1G

Price: $ 0.13
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 20V 2A SOT-23
More Detail: Bipolar (BJT) Transistor PNP 20V 2A 100MHz 460mW S...
DataSheet: NSV20200LT1G datasheetNSV20200LT1G Datasheet/PDF
Quantity: 3000
3000 +: $ 0.11392
6000 +: $ 0.10656
15000 +: $ 0.09921
30000 +: $ 0.09799
Stock 3000Can Ship Immediately
$ 0.13
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 180mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 500mA, 2V
Power - Max: 460mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Base Part Number: NSS20200
Description

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NSV20200LT1G – Application Field and Working Principle

The NSV20200LT1G is a single bipolar junction transistor (BJT) device which is used for a range of general purpose applications. It is suitable for switching and amplification of electrical signals. In this article, we will explore the application field and working principle of the NSV20200LT1G.

Application Field

The NSV20200LT1G is commonly used in applications requiring amplification or switching, such as audio amplifiers and switching power supplies. It has the ability to switch between two output voltages or currents, which is why it is used in many switching applications. It is also used in applications where a large current needs to be driven at a high frequency. Due to its low power consumption, it is ideal for use in battery-powered applications. The NSV20200LT1G is also widely used in digital electronics as a switching device.

Operating and Electrical Characteristics

The NSV20200LT1G has a wide power range and can handle currents up to 3.2A Max. It has a Pd (Power Rating) of 0.70W Max. It has an hFE range of 40~300 and a VCE (Collector to Emitters Voltage) of 40V Max. The package type is a TO-92 and it is made up of a silicone casing. It is sold individually or in bulk quantities.

Working Principle

The NSV20200LT1G works by allowing current flow between the collector and the emitter when a base current is applied. This is called the transistor’s switching action. When the base current is increased, the collector current increases proportionally. This is called the transistor’s amplifier action. By varying the base current, the collector current can be changed. In this way, an amplifier section can be created.

The NSV20200LT1G can be thought of as having three distinct sections – the collector, the base, and the emitter. The collector is the terminal to which the load (the device which will be switched) is connected. The base is the terminal to which the base current is applied. The emitter is the terminal to which the collector current returns.

Conclusion

The NSV20200LT1G is a single bipolar junction transistor (BJT) device which is used for a range of general purpose applications, such as audio amplifiers and switching power supplies. It works by allowing current flow between the collector and the emitter when a base current is applied. It also works as an amplifier section by varying the base current. The NSV20200LT1G is a reliable and versatile device which is widely used in digital electronics.

The specific data is subject to PDF, and the above content is for reference

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