NSV20201LT1G Discrete Semiconductor Products |
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Allicdata Part #: | NSV20201LT1GOSTR-ND |
Manufacturer Part#: |
NSV20201LT1G |
Price: | $ 0.13 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 20V 2A SOT-23-3 |
More Detail: | Bipolar (BJT) Transistor NPN 20V 2A 150MHz 460mW S... |
DataSheet: | NSV20201LT1G Datasheet/PDF |
Quantity: | 3000 |
3000 +: | $ 0.11392 |
6000 +: | $ 0.10656 |
15000 +: | $ 0.09921 |
30000 +: | $ 0.09799 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 2A |
Voltage - Collector Emitter Breakdown (Max): | 20V |
Vce Saturation (Max) @ Ib, Ic: | 100mV @ 200mA, 2A |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 500mA, 2V |
Power - Max: | 460mW |
Frequency - Transition: | 150MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 (TO-236) |
Description
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NSV20201LT1G is a monolithic, single-element NPN Silicon general-purpose transistors manufactured by transistor manufacturer LT1G. It is widely used in the field of discrete transistors and is a device widely used in inverting, switching and amplifying circuits. The NSV20201LT1G is essentially an NPN transistor and is divided into two groups of components on the circuit. The first is the collector which is the base of the transistor. The second is the emitter which is connected to ground. Additionally it has the following specifications: collector-emitter voltage of 40V and collector-base voltage of 40V, and an emitter-base voltage of 6V. The design features a small-size, low-cost and low-power NPN transistor, which is suitable for a large number of electronic applications. The transistor is manufactured in an easy-to-use, thin-film process and uses an optimized NPN transistor structure that allows for lower collector-base voltage with low collector–emitter and base–emitter leakage. The functioning of this transistor is based on the principles of PN junctions and current flow. The operation of the circuit relies on the flow of electrons from the collector to the emitter of the transistor. In this process, the electron current is controlled by the base–emitter voltage. When the base–emitter voltage increases, the current flow increases and so, in turn, the voltage between collector and emitter. The NSV20201LT1G has a wide range of applications in telecommunications, consumer electronics, automotive and industrial applications. It is used as a general-purpose switch in various industrial, consumer and telecommunications applications. It can be used to amplify low-level signals in power amplifiers, audio and video equipment, radio receivers and transmitters, computer peripherals, pulse generators, and many more. In summary, NSV20201LT1G is a single element NPN BJT transistor manufactured by LT1G that is used in many common applications and is commonly employed for its low-cost, low-power and small-size characteristics. It works by controlling the flow of electrons from the collector to the emitter which is regulated by the base–emitter voltage. The NSV20201LT1G is used in a variety of applications including telecommunications, consumer electronics, automotive and industrial applications.
The specific data is subject to PDF, and the above content is for reference
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