NSV60201LT1G Allicdata Electronics

NSV60201LT1G Discrete Semiconductor Products

Allicdata Part #:

NSV60201LT1GOSTR-ND

Manufacturer Part#:

NSV60201LT1G

Price: $ 0.18
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 60V 2A SOT23-3
More Detail: Bipolar (BJT) Transistor NPN 60V 2A 100MHz 460mW S...
DataSheet: NSV60201LT1G datasheetNSV60201LT1G Datasheet/PDF
Quantity: 1000
3000 +: $ 0.16018
6000 +: $ 0.14913
15000 +: $ 0.14729
Stock 1000Can Ship Immediately
$ 0.18
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 140mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1A, 2V
Power - Max: 460mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Description

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The NSV60201LT1G is a single, NPN, plastic-encapsulated, low-noise, low-saturation-voltage, medium-power, transistor. It is used in a wide range of applications, and is suitable for both frequency and power control. This device can be used for switching, amplification, and other applications such as level translation, power amplification, and power transfer switching.

Application Field

NPN transistors are used to amplify or switch electrical signals, and the NSV60201LT1G is no exception. It is a useful device for all levels of design applications that require low voltage levels, low noise and low saturation voltages. This transistor can be utilized in a variety of applications, including:

• Audio amplifiers
• Linear RF stages
• Pre and post amplifiers
• Switching microphones
• Logic lower-power switch amplifiers
• Level shifting logic voltage
• Battery powered circuits
• Timers and oscillators

Working Principle

The NSV60201LT1G is an NPN transistor. This means it uses two P-type dopants and one N-type dopant to form three layers of chosen material. When the three layers are properly connected, the transistor can be used to amplify or switch electrical signals. The electrical behavior of the transistor depends on the dopants used and how they are laid in the layers.

NPN transistors work by allowing current to flow from the Collector to the Emitter when the Base/Gate voltage is higher than the Emitter. This enables current to be “switched on” through the transistor, allowing small voltage signals to be amplified or switched. The NSV60201LT1G can operate at high frequencies and is designed to have low noise and low saturation voltages. This allows the output to remain as pure and undistorted as possible.

The NPN construction of the NSV60201LT1G allows it to be used in a variety of applications, making it a useful and versatile device. Its low voltage requirements, low noise and low saturation voltages make it an ideal choice for many designs including those requiring precision and sensitive noise control.

The specific data is subject to PDF, and the above content is for reference

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