NSV60600MZ4T1G Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	PNP
Current - Collector (Ic) (Max):	6A
Voltage - Collector Emitter Breakdown (Max):	60V
Vce Saturation (Max) @ Ib, Ic:	350mV @ 600mA, 6A
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	120 @ 1A, 2V
Power - Max:	800mW
Frequency - Transition:	100MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-261-4, TO-261AA
Supplier Device Package:	SOT-223-3
Base Part Number:	NSS60600

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NSV60600MZ4T1G is a Bipolar Junction Transistor (BJT) SINGLE. It is commonly used as a switching transistor. It is widely used in switching and interfacing applications, for example, making analog or digital logic control or amplifying circuits.Bipolar junction transistors are the most widely used type of transistor. They are used in electronic devices such as amplifiers and switches. The NSV60600MZ4T1G is a type of bipolar junction transistor, which is made up of two p-type and one n-type semiconductor. As it is a single-type of BJT, it has 3 terminals: the collector (C), the base (B), and the emitter (E).The working principle of the NSV60600MZ4T1G involves the movement of electrons. When a small current is applied through the base terminal, it controls the current flow between the collector and emitter terminals. The base current is amplified by the gain of the device, resulting in a much larger (or stronger) current flowing between the collector and emitter. In this way, the NSV60600MZ4T1G can be used to amplify a small current into a much larger current, or vice versa. This makes it a useful device in switching and amplifying applications.The NSV60600MZ4T1G has a wide range of applications. It is often used in automotive applications, such as fuel injectors and ignition systems, as well as in industrial applications for controlling motors and other machinery devices. It can also be used for amplification and logic circuits, as well as for power switching devices.The NSV60600MZ4T1G has a wide range of parameters that form its ratings, such as its collector to emitter voltage, the maximum collector current, and the maximum collector power dissipation. It is an NPN type device, meaning that the collector current flows when the base-emitter voltage is larger than the cutoff voltage Vce(sat). The operating temperature range of the NSV60600MZ4T1G is -55 to 175 °C, which makes it a suitable choice for many different applications.In conclusion, the NSV60600MZ4T1G is a single bipolar junction transistor that is primarily used for switching and amplifying applications. It has a wide range of applications, ranging from automotive and industrial to logic and power switching. It has a wide range of parameters which form its ratings, and it has an operating temperature range of -55 to 175 °C.

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