NSV60601MZ4T1G Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Transistors - Bipolar (BJT) - Single

NSV60601MZ4T1G is a N-channel enhancement mode field effect transistor designed for applications requiring logic level gate drive, low on-state resistance and fast switching. It uses an active low on-state resistance technology with low gate charge. This device is intended for power management and data management applications. When the gate is held low the on-state resistance is reduced for optimal switching performance.

Application Field

• Power Management – mobile phones, notebooks, portable media players, etc.
• Data Management – switches, multimedia processors, video amplifiers, etc.
• Networking – Bluetooth transceivers, Ethernet switches, WLANs, etc.

Working Principle

The NSV60601MZ4T1G has an N-channel enhancement mode field effect transistor structure. The device is comprised of a gate, source, and drain terminals. The gate terminal is connected to a voltage source to control the on-state resistance (RDSon) of the device. When a voltage is applied to the gate terminal, electrons are attracted to the gate and form a channel between the source and drain. This channel allows current to flow between the source and drain when voltage is applied across them.

The NSV60601MZ4T1G uses an active low on-state resistance (RDSon) technology which helps to reduce the on-state resistance for improved switching performance. This is done by having multiple channels form when the gate voltage is low. Multiple channels allow for increased current flow through the device, thus reducing the on-state resistance. This device also has low gate-charge, making it ideal for switching applications.

In summary, the NSV60601MZ4T1G is an N-channel enhancement mode field effect transistor designed for power management and data management applications. It uses an active low on-state resistance technology with low gate charge, making it ideal for switching applications. The device can be used in mobile phones, notebooks, portable media players, switches, multimedia processors, video amplifiers, Bluetooth transceivers, Ethernet switches, and WLANs.

The specific data is subject to PDF, and the above content is for reference