NTS10100MFST3G Discrete Semiconductor Products |
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Allicdata Part #: | NTS10100MFST3GTR-ND |
Manufacturer Part#: |
NTS10100MFST3G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE SCHOTTKY 100V 10A 5DFN |
More Detail: | Diode Schottky 100V 10A Surface Mount 5-DFN (5x6) ... |
DataSheet: | NTS10100MFST3G Datasheet/PDF |
Quantity: | 1000 |
Specifications
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 100V |
Current - Average Rectified (Io): | 10A |
Voltage - Forward (Vf) (Max) @ If: | 690mV @ 10A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 70µA @ 100V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | 8-PowerTDFN, 5 Leads |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Operating Temperature - Junction: | -55°C ~ 150°C |
Description
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NTS10100MFST3G Application Field and Working Principle
NTS10100MFST3G is a rectifier, a kind of diode designed to allow current to flow in only one direction. It belongs to the family of single rectifiers, which are electronic components designed to block current in one direction while allowing other direction of current to flow freely.The NTS10100MFST3G is mainly used in applications such as power converters and rectifying circuits. This rectifier diode is specially designed to give superior performance in frequencies up to a million Hertz, making it ideal for inverter circuits as well as in systems that generate and broadcasts signals in high frequencies. Also, it is ideal for medium- and high-voltage applications as it can handle more current than its other counterparts.In terms of its working principle, the NTS10100MFST3G follows the basic rule followed by all rectifier diodes; which is to allow current in only one direction. It does this by creating an internal electric field that blocks current in one direction while allowing it to flow freely in the other direction. In other words, the joules lost in the electric field difference serves as a barrier against the back flow of current.This barrier primarily exists due to the process of junction band gap engineering, where two dissimilar materials (for example, silicon and boron in the case of the NTS10100MFST3G) are connected together. This arrangement allows current to flow in one direction, while blocking current flow in the opposite direction. In this case, the flow of electrons is restricted in p-type materials while the flow of holes is restrained in n-type materials, thus creating a junction that prevents the back flow of current.In addition to the electrical properties of the NTS10100MFST3G, it also has other operational characteristics. For instance, it is not susceptible to thermal runaways and its resistance to surge currents is superior. Its low leakage current makes it highly reliable and its package gives it excellent thermal stability. Thus, this rectifier diode will deliver optimal performance even in extreme conditions.All in all, the NTS10100MFST3G is a single rectifier designed to handle frequencies up to a million Hertz, making it ideal for a range of power converters. It has properties that make it highly reliable and excellent in surge current protection. Furthermore, it has excellent thermal stability and low leakage current, giving superior performance in a range of applications from high-voltage ones to inverter circuits.The specific data is subject to PDF, and the above content is for reference
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